Small Signal Transistor BC856AW-G Thru. BC858CW-G (PNP) RoHS Device Features -Ideally suited for automatic insertion -For Switching and AF Amplifier Applications SOT-323 -Power dissipation PCM: 0.15W ( TA=25C) 0.087 (2.20) 0.079 (2.00) -Collector current 3 ICM: -0.1A -Collector-base voltage 0.053(1.35) 0.045(1.15) VCBO: BC856W= -80V BC857W= -50V 1 2 0.006 (0.15) BC858W= -30V 0.055 (1.40) 0.003 (0.08) 0.047 (1.20) -Operating and storage junction temperature 0.039 (1.00) 0.096 (2.45) range: TJ, TSTG= -65 to +150C 0.085 (2.15) 0.035 (0.90) Mechanical data 0.004 (0.10) max -Case: SOT-323, molded plastic. 0.016 (0.40) -Terminals: solderable per MIL-STD-750, 0.018 (0.46) 0.008 (0.20) 0.010 (0.26) method 2026. Circuit diagram 3 Dimensions in inches and (millimeter) -1.BASE -2.EMITTER -3.COLLECTOR 1 2 Maximum Ratings (at Ta=25C unless otherwise noted) Symbol Parameter Value Units -80 BC856W-G Collector-Base Voltage VCBO -50 V BC857W-G -30 BC858W-G BC856W-G -65 Collector-Emitter Voltage BC857W-G VCEO -45 V -30 BC858W-G Emitter-Base Voltage VEBO -5 V Collector Current -Continuous IC -0.1 A Collector Power Dissipation PC 150 mW O Junction Temperature TJ 150 C O Storage Temperature Range TSTG -65 to +150 C Company reserves the right to improve product design , functions and reliability without notice. REV:B QW-BTR36 Page 1 Comchip Technology CO., LTD.Small Signal Transistor Electrical Characteristics (TA= 25 C unless otherwise specified) Symbol Parameter Test Conditions MIN MAX Units -80 BC856W-G Collector-Base Breakdown Voltage BC857W-G VCBO IC = -10A , IE=0 -50 V BC858W-G -30 -65 BC856W-G Collector-Emitter Breakdown Voltage BC857W-G VCEO IC = -10mA , IB=0 -45 V BC858W-G -30 Emitter-Base Breakdown Voltage IE = -1A , IC=0 VEBO -5 V VCB= -30V , IE=0 Collector Cut-off Current ICBO -15 nA BC856AW,857AW,858AW 125 250 hFE VCE = -5V , IC= -2mA DC Current Gain BC856BW,857BW,858BW 220 475 BC857CW,858CW 420 800 Collector-Emitter Saturation Voltage VCE(sat) IC =-100mA , IB=-5mA -0.65 V Base-Emitter Saturation Voltage VBE(sat) IC =-100mA , IB=-5mA -1.1 V VCE=-5V , IC=-10mA Transition Frequency fT 100 MHZ f=100MHZ Collector Capacitance pF Cob VCB =-10V , f=1MHZ 4.5 Company reserves the right to improve product design , functions and reliability without notice. REV:B QW-BTR36 Page 2 Comchip Technology CO., LTD.