General Purpose Transistor MMBT3906-HF (PNP) RoHS Device Halogen Free Features SOT-23 -Epitaxial planar die construction 0.119 (3.00) 0.110 (2.80) -As complementary type, the NPN 3 transistor MMBT3906-HF is recommended 0.056 (1.40) 0.047 (1.20) 1 2 0.079 (2.00) 0.006 (0.15) Collector 0.003 (0.08) 0.071 (1.80) 3 0.041 (1.05) 0.100 (2.55) 0.089 (2.25) 0.035 (0.90) 1 Base 0.004 (0.10) max 0.020 (0.50) 0.020 (0.50) 0.012 (0.30) 0.012 (0.30) 2 Emitter Dimensions in inches and (millimeter) Maximum Ratings (at TA=25C unless otherwise noted) Symbol Typ Parameter Min Max Unit Collector-Base voltage -40 V VCBO Collector-Emitter voltage VCEO -40 V Emitter-Base voltage VEBO -5 V Collector current-Continuous IC -0.2 A Collector dissipatioin PC 0.3 W Storage temperature and junction temperature TSTG , TJ +150 -55 C Electrical Characteristics (at TA=25C unless otherwise noted) Symbol Min Parameter Conditions Max Unit Collector-Base breakdown voltage IC =-100 A , IE=0 V(BR)CBO -40 V Collector-Emitter breakdown voltage IC =-1mA , IB=0 V(BR)CEO -40 V Emitter-Base breakdown voltage IE =-100 A , IC=0 V(BR)EBO -5 V Collector cut-off current VCB=-40V , IE=0 ICBO -0.1 A Collector cut-off current VCE=-40V , IB=0 ICEO -0.1 A Emitter cut-off current VEB=-5V , IC=0 IEBO -0.1 A VCE=-1V , IC=-10mA hFE(1) 100 300 DC current gain VCE=-1V , IC=-50mA hFE(2) 60 Collector-Emitter saturation voltage VCE(sat) IC=-50mA , IB=-5mA -0.3 V Base-Emitter saturation voltage VBE(sat) IC=-50mA , IB=-5mA -0.95 V VCE=-20V , IC=-10mA Transition frequency fT 250 Mhz f=100MHZ VCC=-3.0V , VBE=-0.5V Delay time td 35 nS IC=-10mA , IB1=-1.0mA tr 35 nS Rise time VCC=-3.0Vdc , IC=-10mA Storage time ts 225 nS IB1=IB2=-1.0mA tf 75 nS Fall time REV:B QW-JTR01 Page 1General Purpose Transistor RATING AND CHARACTERISTIC CURVES (MMBT3906-HF) Fig.2- hFE IC Fig.1- Static Characteristic -90 300 -500uA -C50O0MuAMON EMITTER -450uA -80 -450uA Ta=25 COMMON EMITTER Ta=100C -400uA VCE=-1V -350uA -300uA -60 200 -250uA Ta=25C -200uA -40 -150uA 100 -100uA -20 I =-50uA B -0 0 -0 -4 -8 -12 -16 -18 -0.1 -1 -10 -100 Collector Current , Ic (mA) Collector-Emitter Voltage, VCE (V) Fig. 4- VBEsat IC Fig. 3- VCEsat IC -1.2 500 300 -0.8 100 -0.4 -30 =10 -0.0 -10 100 1 -100 -200 1 10 200 -10 -30 Collector Current, Ic (mA) Collector Current , Ic (mA) Fig. 5- IC VBE Fig. 6- Cob/Cib VCB/VEB -100 9 F=1MHz IE=0 / Ic=0 Cob -30 Ta=25C Ta=100C -10 Cib Ta=25C -3 -1 -0.3 -0.1 1 -100 -0.0 -0.2 -0.4 -0.6 -0.8 -0.1 -1 -3 -10 -20 Reverse Voltage , V (V) Base - Emmiter Voltage , VBE (V) REV:B QW-JTR01 Page 2Page 2 Collector-Emtter Saturation Voltage Collector Current, Ic (mA) ,VCEsat (mV) Capacitance, c (pF) BASE-Emitter Saturation Voltage, ,VBEsat (V) COLLECTOR CURRENT, I (mA) C DC Current Gain, hFE