MMBT4401-G Comchip

General Purpose Transistor MMBT4401-G (NPN) RoHS Device Features SOT-23 -Switching Transistor 0.118(3.00) 0.110(2.80) 3 0.055(1.40) Circuit Diagram 0.047(1.20) 1 2 0.079(2.00) 0.071(1.80) Collector 3 0.006(0.15) 0.003(0.08) 0.041(1.05) 0.100(2.55) 1 0.035(0.90) Base 0.089(2.25) 2 0.004(0.10) max Emitter 0.020(0.50) 0.020(0.50) 0.012(0.30) 0.012(0.30) Dimensions in inches and (millimeter) Maximum Ratings (at Ta=25C unless otherwise noted) Parameter Symbol Value Units Collector-Base voltage VCBO 60 V Collector-Emitter voltage VCEO 40 V Emitter-Base voltage VEBO 6 V Collector current IC 600 mA Collector power dissipation PC 300 mW Thermal resistance, junction to ambient R JA 417 C/W Junction temperature TJ 150 C Storage temperature range TSTG -55 to +150 C Company reserves the right to improve product design , functions and reliability without notice. REV:B QW-BTR32 Page 1General Purpose Transistor Electrical Characteristics ( TA=25C unless otherwise noted) Symbol Parameter Conditions Min. Max. Units Collector-Base breakdown voltage V(BR)CBO IC=100 A, IE=0 60 V Collector-Emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 40 V Emitter-Base breakdown voltage V(BR)EBO IE=100 A, IC=0 6 V Collector cut-off current ICEO VCE=30V, IB=0 100 nA VCB=50V, IE=0 Collector cut-off current ICBO 100 nA VEB=5V, IC=0 Base cut-off current IEBO 100 nA DC current gain hFE VCE=1V, IC=150mA 100 300 Collector-Emitter saturation voltage VCE(sat) IC=150mA, IB=15mA 0.4 V Base-Emitter saturation voltage IC=150mA, IB=15mA VBE(sat) 0.95 V VCE=10V, IC=20mA Transition frequency fT 250 MHz f=100MHz Delay time td 15 nS VCC=30V, VBE(off)=-2V, IC=150mA, IB1=15mA tr Rise time 20 nS Storage time tS 225 nS VCC=30V, IC=150mA IB1=IB2=15mA Fall time tf 30 nS Company reserves the right to improve product design , functions and reliability without notice. REV:B QW-BTR32 Page 2