General Purpose Transistors MMBT4403-G (PNP) RoHS Device Features - Epitaxial planar die construction. - Ideal for medium power amplification and switching. SOT-23 Mechanical data 0.119(3.00) 0.110(2.80) - Case: SOT-23, molded plastic. 3 0.056(1.40) - Terminals: Solderable per MIL-STD-750, 0.047(1.20) method 2026. 1 2 0.006(0.15) - Approx. weight: 0.008 grams(approx.). 0.083(2.10) 0.002(0.05) 0.066(1.70) 0.044(1.10) 0.103(2.60) 0.035(0.90) 0.086(2.20) Diagram: 0.006(0.15) max 0.020(0.50) 0.007(0.20) min 0.013(0.35) Collector 3 Dimensions in inches and (millimeter) 1 Base 2 Emitter Maximum Ratings (at TA=25C unless otherwise noted) Symbol Parameter Value Unit Collector-Base voltage VCBO -40 V Collector-Emitter voltage VCEO -40 V Emitter-Base voltage VEBO -5 V Collector current IC -600 mA Collector power dissipation PC 300 mW Thermal resistance from junction to ambient RJA 417 C/W Junction temperature TJ 150 C Storage temperature range TSTG -55 to +150 C Company reserves the right to improve product design , functions and reliability without notice. REV:B QW-BTR33 Page 1 Comchip Technology CO., LTD.General Purpose Transistors Electrical Characteristics (at TA=25C unless otherwise noted) Parameter Symbol Max. Unit Conditions Min. Typ. Collector-Base breakdown voltage V(BR)CBO IC=-100 A, IE=0 -40 V Collector-Emitter breakdown voltage V(BR)CEO IC=-1mA, IB=0 -40 V Emitter-Base breakdown voltage V(BR)EBO IE=-100 A, IC=0 -5 V A Collector cut-off current ICBO VCB=-35V, IE=0 -0.1 A Collector cut-off current ICEX VCE=-35V, VBE=0.4V -0.1 VEB=-4V, IC=0 A Emitter cut-off current IEBO -0.1 VCE=-1V, IC=-0.1mA hFE1 30 VCE=-1V, IC=-1mA hFE2 60 DC current gain hFE3 VCE=-1V, IC=-10mA 100 hFE4 VCE=-2V, IC=-150mA 100 300 VCE=-2V, IC=-500mA hFE5 20 IC=-150mA, IB=-15mA -0.4 V Collector-Emitter saturation voltage VCE(SAT) IC=-500mA, IB=-50mA -0.75 V IC=-150mA, IB=-15mA -0.95 V Base-Emitter saturation voltage VBE(SAT) IC=-500mA, IB=-50mA -1.30 V VCE=-10V, IC=-20mA Transition frequency fT 200 z f=100MHz Delay time td VCC=-30V, VBE(off)=-0.5V 15 ns tr IC=-150mA, IB1=-15mA ns Rise time 20 Storage time VCC=-30V, IC=-150mA ns tS 225 ns Fall time tf IB1=IB2=-15mA 60 Rating And Characteristic Curves (MMBT4403-G) Fig.2 - hFE IC Fig.1 - Static Characteristic 1000 -250 COMMON COMMON EMITTER EMITTER -450uA Ta=25 VCE=-2V -200 -1mA Ta=100C -0.9mA -0.8mA -0.7mA -150 Ta=25C -0.6mA 100 -0.5mA -100 -0.4mA -0.3mA -0.2mA -50 B IB=-0.1mA 10 -0 -0 -2 -4 -6 -1 -10 -100 -600 Collector Current , Ic (mA) Collector-Emitter Voltage, VCE (V) Company reserves the right to improve product design , functions and reliability without notice. REV:B QW-BTR33 Page 2 Comchip Technology CO., LTD. Collector Current, IC (mA) DC Current Gain, hFE