General Purpose Transistors MMBT4403-HF (PNP) RoHS Device Halogen Free Features - Power dissipation of 300mW. SOT-23 - High stability and high reliability. 1. Base 2. Emitter 0.118(3.00) 3. Collector 0.110(2.80) 3 0.055(1.40) Mechanical data 0.047(1.20) 1 2 - Case: SOT-23, molded plastic. 0.079(2.00) 0.071(1.80) - Epoxy UL: 94V-0. 0.006(0.15) - Mounting position: Any. 0.003(0.08) 0.100(2.55) 0.041(1.05) 0.089(2.25) 0.035(0.90) 0.004(0.10) Circuit Diagram 0.000(0.00) 0.020(0.50) 0.020(0.50) 0.012(0.30) 0.012(0.30) Collector 3 Dimensions in inches and (millimeter) 1 Base 2 Emitter Maximum Ratings (at TA=25C unless otherwise noted) Symbol Parameter Value Unit Collector-base voltage VCBO -40 V Collector-emitter voltage VCEO -40 V Emitter-base voltage VEBO -5 V Collector current-continuous IC -600 mA Collector power dissipation PC 300 mW Junction temperature TJ 150 C Storage temperature range TSTG -55 to +150 C Thermal resistance from junction to ambient R JA 417 C/W Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-JTR90 Page 1 Comchip Technology CO., LTD.General Purpose Transistors Electrical Characteristics (at TA=25C unless otherwise noted) Symbol Typ. Parameter Conditions Min. Max. Unit Collector-base breakdown voltage V(BR)CBO IC = -100 A, IE = 0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC = -1mA, IB = 0 -40 V Emitter-base breakdown voltage V(BR)EBO IE = -100 A, IC = 0 -5 V nA Collector cut-o current ICBO VCB = -35V, IE = 0 -100 nA Collector cut-o current ICEX VCE = -35V, VEB(o) = -0.4V -100 VEB = -4V, IC = 0 nA Emitter cut-o current IEBO -100 VCE = -1V, IC = -0.1mA hFE1 30 VCE = -1V, IC = -1mA hFE2 60 DC current gain hFE3 VCE = -1V, IC = -10mA 100 hFE4 VCE = -2V, IC = -150mA 100 300 VCE = -2V, IC = -500mA hFE5 20 IC = -150mA, IB = -15mA -0.40 V Collector-emitter saturation voltage VCE(sat) IC = -500mA, IB = -50mA -0.75 V IC = -150mA, IB = -15mA -0.95 V Base-emitter saturation voltage VBE(sat) IC = -500mA, IB = -50mA -1.30 V VCE = -10V, IC = -20mA, Transition frequency fT 200 z f = 100MHz Delay time td 15 ns VCC = -30V, VBE(o) = -0.5V, IC = -150mA, IB1 = -15mA tr ns Rise time 20 Storage time ns tS 225 VCC = -30V, IC = -150mA, IB1 = IB2 = -15mA ns Fall time tf 60 Rating and Characteristic Curves (MMBT4403-HF) Fig.2 - hFE IC Fig.1 - Static Characteristic 1000 -250 COMMON COMMON EMITTER EMITTER-450uA VCE = -2V Ta=25C -200 -1mA Ta=100C -0.9mA -0.8mA -0.7mA -150 Ta=25C -0.6mA 100 -0.5mA -100 -0.4mA -0.3mA -0.2mA -50 B IB=-0.1mA 10 -0 -0 -2 -4 -6 -1 -10 -100 -600 Collector Current , Ic (mA) Collector-Emitter Voltage, VCE (V) Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-JTR90 Page 2 Comchip Technology CO., LTD. Collector Current, IC (mA) DC Current Gain, hFE