General Purpose Transistors MMBT5401-HF (PNP) RoHS Device Halogen Free Features - Power dissipation of 300mW. SOT-23 - High stability and high reliability. 1. Base 2. Emitter 0.118(3.00) 3. Collector 0.110(2.80) 3 0.055(1.40) Mechanical data 0.047(1.20) 1 2 - Case: SOT-23, molded plastic. 0.079(2.00) 0.071(1.80) - Epoxy UL: 94V-0. 0.006(0.15) - Mounting position: Any. 0.003(0.08) 0.100(2.55) 0.041(1.05) 0.089(2.25) 0.035(0.90) 0.004(0.10) Circuit Diagram 0.000(0.00) 0.020(0.50) 0.020(0.50) 0.012(0.30) 0.012(0.30) Collector 3 Dimensions in inches and (millimeter) 1 Base 2 Emitter Maximum Ratings (at TA=25C unless otherwise noted) Symbol Parameter Value Unit Collector-base voltage VCBO -160 V Collector-emitter voltage VCEO -150 V Emitter-base voltage VEBO -5 V Collector current-continuous IC -600 mA Collector power dissipation PC 300 mW Junction temperature TJ 150 C Storage temperature range TSTG -55 to +150 C Thermal resistance from junction to ambient RJA 416 C/W Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-JTR105 Page 1 Comchip Technology CO., LTD.General Purpose Transistors Electrical Characteristics (at TA=25C unless otherwise noted) Symbol Typ. Parameter Conditions Min. Max. Unit Collector-base breakdown voltage V(BR)CBO IC = -100A, IE = 0 -160 V Collector-emitter breakdown voltage (Note 1) V(BR)CEO IC = -1mA, IB = 0 -150 V Emitter-base breakdown voltage V(BR)EBO IE = -10A, IC = 0 -5 V nA Collector cut-o current ICBO VCB = -120V, IE = 0 -100 nA Emitter cut-o current IEBO VEB = -4V, IC = 0 -100 VCE = -5V, IC = -1mA hFE(1) 80 DC current gain (Note 1) VCE = -5V, IC = -10mA hFE(2) 100 300 VCE = -5V, IC = -50mA hFE(3) 30 IC = -10mA, IB = -1mA -0.2 V Collector-emitter saturation voltage (Note 1) VCE(sat) IC = -50mA, IB = -5mA -0.5 V IC = -10mA, IB = -1mA -1.00 V Base-emitter saturation voltage (Note 1) VBE(sat) IC = -50mA, IB = -5mA -1.00 V VCE = -5V, IC = 10mA, Transition frequency fT 100 z f = 30MHz Notes: 1. Pulse test: pulse width 300s, duty cycle 2%. Classication of hFE(2) 100-300 hFE Rank L H Range 100-200 200-300 Rating and Characteristic Curves (MMBT5401-HF) Fig.1 - Static Characteristic Fig.2 - hFE IC -20 300 COMMON VCE = -5V -100A EMITTER Ta=25C -18 Ta=100C 250 -90A -16 -80A -14 200 -70A -12 -60A -10 150 -50A Ta= 25C -8 -40A 100 -30A -6 -4 -20A 50 -2 IB=-10A -0 0 -0 -3 -6 -9 -1 -10 -100 -600 Collector-Emitter Voltage, VCE (V) Collector Current, Ic (mA) Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-JTR105 Page 2 Comchip Technology CO., LTD. Collector Current, IC (mA) DC Current Gain, hFE