General Purpose Transistors MMBT5551-HF (NPN) RoHS Device Halogen Free Features - Power dissipation of 300mW. SOT-23 - High stability and high reliability. 1. Base 2. Emitter 0.118(3.00) 3. Collector 0.110(2.80) 3 0.055(1.40) Mechanical data 0.047(1.20) 1 2 - Case: SOT-23, molded plastic. 0.079(2.00) 0.071(1.80) - Epoxy UL: 94V-0. 0.006(0.15) - Mounting position: Any. 0.003(0.08) 0.100(2.55) 0.041(1.05) 0.089(2.25) 0.035(0.90) 0.004(0.10) Circuit Diagram 0.000(0.00) 0.020(0.50) 0.020(0.50) 0.012(0.30) 0.012(0.30) Collector 3 Dimensions in inches and (millimeter) 1 Base 2 Emitter Maximum Ratings (at TA=25C unless otherwise noted) Symbol Parameter Value Unit Collector-base voltage VCBO 180 V Collector-emitter voltage VCEO 160 V Emitter-base voltage VEBO 6 V Collector current-continuous IC 600 mA Collector power dissipation PC 300 mW Junction temperature TJ 150 C Storage temperature range TSTG -55 to +150 C Thermal resistance from junction to ambient RJA 416 C/W Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-JTR92 Page 1 Comchip Technology CO., LTD.General Purpose Transistors Electrical Characteristics (at TA=25C unless otherwise noted) Symbol Typ. Parameter Conditions Min. Max. Unit Collector-base breakdown voltage V(BR)CBO IC = 100A, IE = 0 180 V Collector-emitter breakdown voltage (Note 1) V(BR)CEO IC = 1mA, IB = 0 160 V Emitter-base breakdown voltage V(BR)EBO IE = 10A, IC = 0 6 V nA Collector cut-o current ICBO VCB = 120V, IE = 0 50 nA Emitter cut-o current IEBO VEB = 4V, IC = 0 50 VCE = 5V, IC = 1mA hFE(1) 80 DC current gain (Note 1) VCE = 5V, IC = 10mA hFE(2) 100 300 VCE = 5V, IC = 50mA hFE(3) 30 IC = 10mA, IB = 1mA 0.15 V Collector-emitter saturation voltage (Note 1) VCE(sat) IC = 50mA, IB = 5mA 0.20 V IC = 10mA, IB = 1mA 1.00 V Base-emitter saturation voltage (Note 1) VBE(sat) IC = 50mA, IB = 5mA 1.00 V VCE = 10V, IC = 10mA, Transition frequency fT 100 300 z f = 100MHz Collector output capacitance pF Cob VCB = 10V, IE = 0, f = 1MHz 6 Notes: 1. Pulse test: pulse width 300s, duty cycle 2%. Classication of hFE(2) hFE 100-300 Rank L H Range 100-200 200-300 Rating and Characteristic Curves (MMBT5551-HF) Fig.1 - Static Characteristic Fig.2 - hFE IC 18 500 COMMON COMMON EMITTER 90A EMITTER VCE = 5V Ta=25C Ta=100C 80A 15 70A 12 Ta=25C 60A 100 50A 9 40A 30A 6 IB=20A 3 0 10 1 10 100 200 0 2 4 6 8 10 12 Collector-Emitter Voltage, VCE (V) Collector Current, Ic (mA) Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-JTR92 Page 2 Comchip Technology CO., LTD. Collector Current, IC (mA) DC Current Gain, hFE