General Purpose Transistor MMBTA06-HF (NPN) RoHS Device Halogen Free Features - Power dissipation of 300mW. SOT-23 - High stability and high reliability. 1. Base 2. Emitter 0.118(3.00) 3. Collector 0.110(2.80) - For switching and amplier applications. 3 0.055(1.40) 0.047(1.20) 1 2 Mechanical data 0.079(2.00) 0.071(1.80) 0.006(0.15) - Case: SOT-23, molded plastic. 0.003(0.08) - Epoxy : UL 94V-0. 0.100(2.55) 0.041(1.05) 0.089(2.25) 0.035(0.90) - Mounting position: Any. 0.004(0.10) 0.000(0.00) 0.019(0.50) 0.020(0.50) 0.012(0.30) 0.012(0.30) Circuit Diagram Collector Dimensions in inches and (millimeter) 3 1 Base 2 Emitter Maximum Ratings (at TA=25C unless otherwise noted) Symbol Parameter Value Unit Collector-base voltage VCBO 80 V Collector-emitter voltage VCEO 80 V Emitter-base voltage VEBO 4 V Collector current-continuous IC 500 mA Collector power dissipation PC 300 mW Junction temperature TJ 150 C Storage temperature range TSTG -55 to +150 C Thermal resistance, junction to ambient R JA 416 C/W Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-JTR87 Page 1 Comchip Technology CO., LTD.General Purpose Transistor Electrical Characteristics (at TA=25C unless otherwise noted) Parameter Conditions Symbol Min Max Unit Collector-base breakdown voltage IC = 100 A, IE = 0 V(BR)CBO 80 V Collector-emitter breakdown voltage IC = 1mA, IB = 0 V(BR)CEO 80 V Emitter-base breakdown voltage IE = 100A, IC = 0 V(BR)EBO 4 V Collector cut-o current VCB = 80V, IE = 0 ICBO 100 nA Collector cut-o current VCE = 60V, IB = 0 ICEO 1.0 A Emitter cut-o current VEB = 3V, IC = 0 IEBO 100 nA VCE = 1V, IC = 10mA hFE(1) 100 400 DC current gain (Note 1) VCE = 1V, IC = 100mA hFE(2) 100 Collector-emitter saturation voltage (Note 1) IC = 100mA, IB = 10mA VCE(sat) 0.25 V Base-emitter saturation voltage (Note 1) IC = 100mA, IB = 10mA VBE(sat) 1.20 V Transition frequency VCE = 2V, IC = 10mA, f = 100MHz fT 100 MHz Note: 1. Pulse width 300s, duty cycle 2.0%. Rating and Characteristic Curves (MMBTA06-HF) Fig.1 - Static Characteristic Fig.2 - hFE IC 90 500 Common Emitter VCE = 1V 80 500A Ta=25C 450A Ta=100C 70 400A 60 350A 50 Ta= 25C 300A 100 250A 40 200A 30 150A 20 100A 10 IB=50A 0 20 1 10 100 500 0 1 2 3 4 5 6 7 8 9 10 Collector Current, Ic (mA) Collector-Emitter Voltage, VCE (V) Fig.3 - VCEsat IC Fig.4 - VBEsat IC 1 10 =10=10 =10 Ta=100C Ta=25C 0.1 1 Ta= 100C Ta= 25C 0.01 0.1 1 10 100 500 1 10 100 500 Collector Current, Ic (mA) Collector Current, Ic (mA) Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-JTR87 Page 2 Comchip Technology CO., LTD. Collector-Emitter Saturation Voltage, Collector Current, IC (mA) VCEsat (V) Base-Emitter Saturation Voltage, DC Current Gain, hFE VBEsat (V)