General Purpose Transistor MMBTA44-G (NPN) RoHS Device Features - High Collector-emitter voltage. SOT-23 - Ultra small surface mount package. 1 : Base 2 : Emitter 3 : Collector 0.119(3.00) 0.110(2.80) Mechanical data 3 - Case: SOT-23 Standard package, molded 0.056(1.40) 0.047(1.20) plastic. 1 2 - Terminals: Solderable per MIL-STD-750, 0.079(2.00) method 2026. 0.071(1.80) - Mounting position: Any. 0.006(0.15) 0.003(0.08) - Weight: 0.0078 grams(approx.). 0.041(1.05) 0.100(2.550) 0.035(0.90) 0.089(2.250) 0.004(0.10) max 0.020(0.50) Diagram: 0.020(0.50) 0.012(0.30) 0.012(0.30) Collector 3 Dimensions in inches and (millimeter) 1 Base 2 Emitter Maximum Ratings (at TA=25C unless otherwise noted) Symbol Parameter Value Unit Collector-base voltage VCBO 400 V Collector-emitter voltage VCEO 400 V Emitter-base voltage VEBO 6 V Collector current-continuous IC 200 mA Collector current-pulsed ICM 300 mA Collector power dissipation PC 350 mW Thermal resistance from junction to ambient R JA 357 C/W Junction temperature range TJ 150 C Storage temperature range TSTG -55 to +150 C Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-BTR53 Page 1 Comchip Technology CO., LTD.General Purpose Transistor Electrical Characteristics (Ta=25C, unless otherwise specified) Conditions Symbol Min Max Parameter Unit Collector-base breakdown voltage IC=100 A, IE=0 V(BR)CBO 400 V Collector-emitter breakdown voltage IC=1mA, IB=0 V(BR)CEO* 400 V Emitter-base breakdown voltage IE=10 A, IC=0 V(BR)EBO 6 V VCB=400V, IE=0 A Collector cut-off current ICBO 0.1 A Emitter cut-off current VEB=4V, IC=0 IEBO 0.1 VCE=10V, IC=1mA hFE(1)* 40 VCE=10V, IC=10mA hFE(2)* 50 200 DC current gain VCE=10V, IC=50mA hFE(3)* 45 VCE=10V, IC=100mA hFE(4)* 40 IC=1mA, IB=0.1mA VCE(sat)1* 0.4 V Collector-emitter saturation voltage IC=10mA, IB=1mA VCE(sat)2* 0.5 V IC=50mA, IB=5mA VCE(sat)3* 0.75 V Base-emitter saturation voltage IC=10mA, IB=1mA VBE(sat)* 0.75 V Collector output capacitance pF VCB=20V, IE=0, f=1MHZ Cob 7 Emitter input capacitance VEB=0.5V, IC=0, f=1MHZ Cib 130 pF *Pulse test: pulse width 300s, duty cycle 2.0% Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-BTR53 Page 2 Comchip Technology CO., LTD.