BSS123Q N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Gate Threshold Voltage I D BV R DSS DS(ON) Low Input Capacitance T = +25C A Fast Switching Speed 6 V = 10V 0.17A GS Low Input/Output Leakage 100V High Drain-Source Voltage Rating 10 V = 4.5V 0.14A GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) The BSS123Q is suitable for automotive applications requiring specific change control this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. BSS123Q Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 100 V DSS Gate-Source Voltage Continuous V 20 V GSS Continuous I 0.17 D A Continuous Drain Current (Note 5) VGS = 10V Pulsed 0.68 IDM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Max Unit Power Dissipation (Note 5) P 300 mW D 417 C/W Thermal Resistance, Junction to Ambient TA = +25C (Note 5) RJA Operating and Storage Temperature Range -55 to +150 C TJ, TSTG Electrical Characteristics ( TA = +25C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage BV 100 V V = 0V, I = 250A DSS GS D 0.1 A VDS = 100V, VGS = 0V VDS = 100V, VGS = 0V Zero Gate Voltage Drain Current 30 IDSS A T = +150C (Note 7) A 10 nA V = 20V, V = 0V DS GS Gate-Source Leakage , Forward I 50 nA V = 20V, V = 0V GSSF GS DS ON CHARACTERISTICS (Note 6) Gate Threshold Voltage V 0.8 1.4 2.0 V V = V , I = 1mA GS(TH) DS GS D 4.0 6 V = 10V, I = 0.17A GS D Static Drain-Source On-Resistance RDS(ON) 3.6 10 V = 4.5V, I = 0.17A GS D Forward Transfer Admittance 80 370 ms gFS VDS =10V, ID = 0.17A, f = 1.0kHz Diode Forward Voltage 0.84 1.3 V VSD VGS = 0V, IS = 0.34A DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance 22 60 Ciss Output Capacitance 15 pF Coss VDS = 25V, VGS = 0V, f = 1.0MHz Reverse Transfer Capacitance 2.0 6 Crss SWITCHING CHARACTERISTICS (Note 7) Turn-On Delay Time tD(ON) 8 ns Turn-On Rise Time t 8 ns V = 10V, V = 30V, R GS DD Turn-Off Delay Time t 13 ns ID = 0.28A, RGEN = 50 D(OFF) Turn-Off Fall Time t 16 ns F Notes: 5. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at