X-On Electronics has gained recognition as a prominent supplier of DMC4029SSD-13 MOSFETs across the USA, India, Europe, Australia, and various other global locations. DMC4029SSD-13 MOSFETs are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

DMC4029SSD-13 Diodes Incorporated

DMC4029SSD-13 electronic component of Diodes Incorporated
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See Product Specifications
Part No.DMC4029SSD-13
Manufacturer: Diodes Incorporated
Category: MOSFETs
Description: MOSFET Comp ENH FET 40VDs 20Vgs 1.3W
Datasheet: DMC4029SSD-13 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.8136 ea
Line Total: USD 0.81 
Availability - 2895
Ship by Mon. 18 Nov to Wed. 20 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2895
Ship by Mon. 18 Nov to Wed. 20 Nov
MOQ : 1
Multiples : 1
1 : USD 0.8136
10 : USD 0.661
100 : USD 0.4559
500 : USD 0.3634
1000 : USD 0.3388
2500 : USD 0.2775

14550
Ship by Wed. 20 Nov to Tue. 26 Nov
MOQ : 2500
Multiples : 2500
2500 : USD 0.3142

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Brand
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the DMC4029SSD-13 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DMC4029SSD-13 and other electronic components in the MOSFETs category and beyond.

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DMC4029SSD COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits I Low Input Capacitance D Device V R (BR)DSS DS(on) max T = +25C A Low On-Resistance 24m V = 10V 9.0A GS Fast Switching Speed Q2 40V 32m V = 4.5V 7.8A GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) -6.5A 45m V = -10V GS Halogen and Antimony Free. Green Device (Note 3) Q1 -40V -5.9A 55m V = -4.5V GS Qualified to AEC-Q101 Standards for High Reliability Description Mechanical Data This new generation MOSFET has been designed to minimize the on- Case: SO-8 state resistance (R ) and yet maintain superior switching Case Material: Molded Plastic, Green Molding Compound. DS(on) performance, making it ideal for high efficiency power management UL Flammability Classification Rating 94V-0 applications. Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish Tin Finish annealed over Copper leadframe. Applications Solderable per MIL-STD-202, Method 208 e3 DC-DC Converters Weight: 0.074 grams (approximate) Power Management Functions Backlighting D2 D1 S2 D2 G2 D2 G2 G1 S1 D1 G1 D1 S1 S2 TOP VIEW Top View N-Channel MOSFET P-Channel MOSFET Internal Schematic Ordering Information (Note 4 & 5) Part Number Compliance Case Packaging DMC4029SSD-13 Standard SO-8 2,500/Tape & Reel DMC4029SSDQ-13 Automotive SO-8 2,500/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMC4029SSD Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Q2 Value Q1 Units Drain-Source Voltage 40 -40 V V DSS Gate-Source Voltage 20 20 V V GSS Steady T = +25C 7.0 -5.1 A I A D State 5.6 -4.1 T = +70C A Continuous Drain Current (Note 7) V = 10V GS T = +25C 9.0 -6.5 A t<10s I A D 7.2 -5.2 T = +70C A Maximum Body Diode Forward Current (Note 7) 2.5 -2.5 A I S Pulsed Drain Current (10s pulse, duty cycle = 1%) 70 -40 A I DM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units T = +25C 1.3 A Total Power Dissipation (Note 6) P W D 0.8 T = +70C A Steady state 98 Thermal Resistance, Junction to Ambient (Note 6) R C/W JA t<10s 59 1.8 T = +25C A Total Power Dissipation (Note 7) P W D 1.1 T = +70C A Steady state 71 Thermal Resistance, Junction to Ambient (Note 7) R JA t<10s 43 C/W Thermal Resistance, Junction to Case (Note 7) 11.8 R JC Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics N-Channel Q2 ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BV 40 V V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current I 1 A V = 40V, V = 0V DSS DS GS Gate-Source Leakage nA I 100 V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage 1.0 3.0 V V V = V , I = 250A GS(th) DS GS D 15 24 V = 10V, I = 6A GS D Static Drain-Source On-Resistance R m DS(ON) 20 32 V = 4.5V, I = 5A GS D Diode Forward Voltage V 0.7 1.0 V V = 0V, I = 1.0A SD GS S DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance C 1060 iss V = 20V, V = 0V, DS GS Output Capacitance C 84 pF oss f = 1.0MHz Reverse Transfer Capacitance C 58 rss Gate Resistance R 1.6 V = 0V, V = 0V, f = 1.0MHz G DS GS Total Gate Charge (V = 4.5V) Q 8.8 GS g Total Gate Charge (V = 10V) Q 19.1 GS g nC V = 20V, I = 8A DS D Gate-Source Charge 3.0 Q gs Gate-Drain Charge 2.5 Q gd Turn-On Delay Time 5.3 t D(on) Turn-On Rise Time 7.1 t V = 25V, R = 2.5 r DD L nS Turn-Off Delay Time t 15.1 V = 10V, R = 3 D(off) GS G Turn-Off Fall Time t 4.8 f Body Diode Reverse Recovery Time t 10.5 nS I = 8A, di/dt = 100A/s rr F Body Diode Reverse Recovery Charge Q 4.15 nC I = 8A, di/dt = 100A/s rr F 2 of 8 March 2014 DMC4029SSD Diodes Incorporated www.diodes.com Document number: DS36350 Rev. 3 - 2 ADVANCE INFORMATION NEW PRODUCT

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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