DMC4029SSD COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits I Low Input Capacitance D Device V R (BR)DSS DS(on) max T = +25C A Low On-Resistance 24m V = 10V 9.0A GS Fast Switching Speed Q2 40V 32m V = 4.5V 7.8A GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) -6.5A 45m V = -10V GS Halogen and Antimony Free. Green Device (Note 3) Q1 -40V -5.9A 55m V = -4.5V GS Qualified to AEC-Q101 Standards for High Reliability Description Mechanical Data This new generation MOSFET has been designed to minimize the on- Case: SO-8 state resistance (R ) and yet maintain superior switching Case Material: Molded Plastic, Green Molding Compound. DS(on) performance, making it ideal for high efficiency power management UL Flammability Classification Rating 94V-0 applications. Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish Tin Finish annealed over Copper leadframe. Applications Solderable per MIL-STD-202, Method 208 e3 DC-DC Converters Weight: 0.074 grams (approximate) Power Management Functions Backlighting D2 D1 S2 D2 G2 D2 G2 G1 S1 D1 G1 D1 S1 S2 TOP VIEW Top View N-Channel MOSFET P-Channel MOSFET Internal Schematic Ordering Information (Note 4 & 5) Part Number Compliance Case Packaging DMC4029SSD-13 Standard SO-8 2,500/Tape & Reel DMC4029SSDQ-13 Automotive SO-8 2,500/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMC4029SSD Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Q2 Value Q1 Units Drain-Source Voltage 40 -40 V V DSS Gate-Source Voltage 20 20 V V GSS Steady T = +25C 7.0 -5.1 A I A D State 5.6 -4.1 T = +70C A Continuous Drain Current (Note 7) V = 10V GS T = +25C 9.0 -6.5 A t<10s I A D 7.2 -5.2 T = +70C A Maximum Body Diode Forward Current (Note 7) 2.5 -2.5 A I S Pulsed Drain Current (10s pulse, duty cycle = 1%) 70 -40 A I DM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units T = +25C 1.3 A Total Power Dissipation (Note 6) P W D 0.8 T = +70C A Steady state 98 Thermal Resistance, Junction to Ambient (Note 6) R C/W JA t<10s 59 1.8 T = +25C A Total Power Dissipation (Note 7) P W D 1.1 T = +70C A Steady state 71 Thermal Resistance, Junction to Ambient (Note 7) R JA t<10s 43 C/W Thermal Resistance, Junction to Case (Note 7) 11.8 R JC Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics N-Channel Q2 ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BV 40 V V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current I 1 A V = 40V, V = 0V DSS DS GS Gate-Source Leakage nA I 100 V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage 1.0 3.0 V V V = V , I = 250A GS(th) DS GS D 15 24 V = 10V, I = 6A GS D Static Drain-Source On-Resistance R m DS(ON) 20 32 V = 4.5V, I = 5A GS D Diode Forward Voltage V 0.7 1.0 V V = 0V, I = 1.0A SD GS S DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance C 1060 iss V = 20V, V = 0V, DS GS Output Capacitance C 84 pF oss f = 1.0MHz Reverse Transfer Capacitance C 58 rss Gate Resistance R 1.6 V = 0V, V = 0V, f = 1.0MHz G DS GS Total Gate Charge (V = 4.5V) Q 8.8 GS g Total Gate Charge (V = 10V) Q 19.1 GS g nC V = 20V, I = 8A DS D Gate-Source Charge 3.0 Q gs Gate-Drain Charge 2.5 Q gd Turn-On Delay Time 5.3 t D(on) Turn-On Rise Time 7.1 t V = 25V, R = 2.5 r DD L nS Turn-Off Delay Time t 15.1 V = 10V, R = 3 D(off) GS G Turn-Off Fall Time t 4.8 f Body Diode Reverse Recovery Time t 10.5 nS I = 8A, di/dt = 100A/s rr F Body Diode Reverse Recovery Charge Q 4.15 nC I = 8A, di/dt = 100A/s rr F 2 of 8 March 2014 DMC4029SSD Diodes Incorporated www.diodes.com Document number: DS36350 Rev. 3 - 2 ADVANCE INFORMATION NEW PRODUCT