X-On Electronics has gained recognition as a prominent supplier of DMG1016UDWQ-7 MOSFETs across the USA, India, Europe, Australia, and various other global locations. DMG1016UDWQ-7 MOSFETs are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

DMG1016UDWQ-7 Diodes Incorporated

DMG1016UDWQ-7 electronic component of Diodes Incorporated
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Part No.DMG1016UDWQ-7
Manufacturer: Diodes Incorporated
Category: MOSFETs
Description: Trans MOSFET N/P-CH 20V 1.066A/0.845A Automotive 6-Pin SOT-363 T/R
Datasheet: DMG1016UDWQ-7 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.0736 ea
Line Total: USD 220.8 
Availability - 1370610
Ship by Tue. 26 Nov to Mon. 02 Dec
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
2410
Ship by Tue. 03 Dec to Fri. 06 Dec
MOQ : 5
Multiples : 5
5 : USD 0.147
50 : USD 0.1298
150 : USD 0.1226
500 : USD 0.1133
2500 : USD 0.1092
5000 : USD 0.1068

1370610
Ship by Tue. 26 Nov to Mon. 02 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.0736

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Pd - Power Dissipation
Mounting Style
Packaging
Channel Mode
Brand
Gate-Source Voltage Max
Operating Temp Range
Package Type
Pin Count
Type
Number Of Elements
Operating Temperature Classification
Drain-Source On-Volt
Rad Hardened
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the DMG1016UDWQ-7 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DMG1016UDWQ-7 and other electronic components in the MOSFETs category and beyond.

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DMG1016UDW COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance Device BV R I T = +25C DSS DS(ON) D A Low Gate Threshold Voltage Q1 20V 0.45 V = 4.5V 1066mA GS Low Input Capacitance Q2 -20V 0.75 V = -4.5V -845mA GS Fast Switching Speed Low Input/Output Leakage Complementary Pair MOSFET Description Ultra-Small Surface Mount Package This new generation MOSFET has been designed to minimize the on- ESD Protected state resistance (R ) and yet maintain superior switching DS(ON) Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) performance, making it ideal for high efficiency power management Halogen and Antimony Free. Green Device (Note 3) applications. Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Applications Mechanical Data Battery Operated Systems and Solid-State Relays Case: SOT363 Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Case Material: Molded Plastic, Green Molding Compound. Memories, Transistors, etc. UL Flammability Classification Rating 94V-0 Power Supply Converter Circuits Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 e3 Terminal Connections: See Diagram Weight: 0.006 grams (Approximate) D G S 1 2 2 Q Q 1 2 S G D 1 1 2 ESD PROTECTED Top View Top View Internal Schematic Ordering Information (Note 5) Part Number Compliance Case Packaging DMG1016UDW-7 Standard SOT363 3000/Tape & Reel DMG1016UDWQ-7 Automotive SOT363 3000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See DMG1016UDW Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 6) 330 mW P D Thermal Resistance, Junction to Ambient (Note 6) R 379 C/W JA Operating and Storage Temperature Range T T -55 to +150 C J, STG Maximum Ratings N-CHANNEL Q1 ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage 20 V V DSS Gate-Source Voltage 6 V V GSS Steady T = +25C 1066 A Continuous Drain Current (Note 6) I mA D State 690 T = +85C A Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) 3.2 A I DM Maximum Ratings P-CHANNEL Q2 ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V -20 V DSS Gate-Source Voltage V 6 V GSS Steady T = +25C -845 A Continuous Drain Current (Note 6) mA I D State -548 T = +85C A Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I -2.2 A DM Electrical Characteristics N-CHANNEL Q1 ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage 20 V BVDSS VGS = 0V, ID = 250A 100 nA Zero Gate Voltage Drain Current T = +25C I V =20V, V = 0V C DSS DS GS Gate-Source Leakage 1.0 A I V = 4.5V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage 0.5 1.0 V V V = V , I = 250A GS(TH) DS GS D 0.3 0.45 V = 4.5V, I = 600mA GS D Static Drain-Source On-Resistance R 0.4 0.6 V = 2.5V, I = 500mA DS(ON) GS D 0.5 0.75 V = 1.8V, I = 350mA GS D Forward Transfer Admittance Y 1.4 S V = 10V, I = 400mA fs DS D Diode Forward Voltage (Note 7) V 0.7 1.2 V V = 0V, I = 150mA SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance C 60.67 pF iss V = 10V, V = 0V, DS GS Output Capacitance C 9.68 pF oss f = 1.0MHz Reverse Transfer Capacitance C 5.37 pF rss Total Gate Charge Q 736.6 nC g VGS = 4.5V, VDS = 10V, Gate-Source Charge 93.6 nC Q gs I = 250mA D Gate-Drain Charge 116.6 nC Q gd Turn-On Delay Time t 5.1 ns D(ON) Turn-On Rise Time t 7.4 ns V = 10V, V = 4.5V, R DD GS Turn-Off Delay Time t 26.7 ns R = 47, R = 10 D(OFF) L G Turn-Off Fall Time t 12.3 ns F Notes: 6. Device mounted on FR-4 PCB with minimum recommended pad layout. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. 2 of 11 DMG1016UDW March 2018 Diodes Incorporated www.diodes.com Document number: DS31860 Rev. 8 - 2 NEW PRODUCT

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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