DMN6066SSS 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low on-resistance I D V R (BR)DSS DS(on) Fast switching speed T = +25C A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 5.0A 66m V = 10V GS Halogen and Antimony Free. Green Device (Note 3) 60V Qualified to AEC-Q101 Standards for High Reliability 97m V = 4.5V 4.1A GS PPAP Capable (Note 4) Mechanical Data Description and Applications This MOSFET is designed to minimize the on-state resistance and yet Case: SO-8 maintain superior switching performance, making it ideal for high Case Material: Molded Plastic, Green Molding Compound. efficiency power management applications. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Motor Control Terminals Connections: See Diagram Below Backlighting Terminals: Finish Tin Finish Annealed over Copper Leadframe. DC-DC Converters Solderable per MIL-STD-202, Method 208 Power Management Functions Weight: 0.074 grams (Approximate) D SO-8 G S Top View Top View Equivalent Circuit Ordering Information (Notes 4 & 5) Part Number Compliance Case Packaging DMN6066SSS-13 Commercial SO-8 2,500/Tape & Reel DMN6066SSSQ-13 Automotive SO-8 2,500/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN6066SSS Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 60 V DSS Gate-Source Voltage (Note 6) V 20 V GS Single Pulsed Avalanche Energy (Note 11) E 37.5 mJ AS Single Pulsed Avalanche Current (Note 11) I 5.0 A AS (Note 8) 5.0 Continuous Drain Current V = 10V T = +70C (Note 8) I 4.0 A GS A D (Note 7) 3.7 Pulsed Drain Current (Note 9) 23 A V = 10V I GS DM Continuous Source Current (Body diode) (Note 8) 4.0 A I S Pulsed Source Current (Body diode) (Note 9) 23 A I SM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit 1.56 (Note 7) Power Dissipation 12.5 W P D Linear Derating Factor 2.81 mW/C (Note 8) 22.5 (Note 7) 80.0 Thermal Resistance, Junction to Ambient R JA (Note 8) 44.5 C/W Thermal Resistance, Junction to Lead (Note 10) 37.0 R JL Operating and Storage Temperature Range -55 to 150 C T , T J STG Notes: 6. AEC-Q101 V maximum is 16V. GS 7. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions the device is measured when operating in a steady-state condition. 8. Same as note (7), except the device is measured at t 10 sec. 9. Same as note (7), except the device is pulsed with D= 0.02 and pulse width 300 s. The pulse current is limited by the maximum junction temperature. 10. Thermal resistance from junction to solder-point (at the end of the drain lead). 11. UIS in production with L = 3.0mH, I = 5.0A, R = 25, V =50V, starting T = +25C. AS G DD J 2 of 9 April 2015 DMN6066SSS Diodes Incorporated www.diodes.com Document Number DS33047 Rev. 3 - 2 ADVANCE INFORMATION