DMN65D8LW N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance I D V R Package (BR)DSS DS(ON) Low Gate Threshold Voltage T = +25C A Low Input Capacitance 300mA 3 V = 10V Fast Switching Speed GS 60V SOT323 Small Surface Mount Package 4 V = 5V 260mA GS ESD Protected Gate, 1KV (HBM) Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description This new generation MOSFET has been designed to minimize the on- state resistance (R ) and yet maintain superior switching DS(on) performance, making it ideal for high efficiency power management Mechanical Data applications. Case: SOT323 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Applications Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish annealed over Alloy 42 leadframe DC-DC Converters (Lead Free Plating). Solderable per MIL-STD-202, Method 208 Power Management Functions Terminal Connections: See Diagram Battery Operated Systems and Solid-State Relays Weight: 0.006 grams (approximate) Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Drain Memories, Transistors, etc SOT323 D Gate Gate G S Protection Source Diode Top View Top View Equivalent Circuit ESD PROTECTED TO 1kV Pin Configuration Ordering Information (Note 4) Part Number Case Packaging DMN65D8LW-7 SOT323 3000/Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See DMN65D8LW Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage 60 V V DSS Gate-Source Voltage 20 V V GSS Steady T = +25C 300 A Continuous Drain Current (Note 6) V = 10V I mA GS D State 230 T = +70C A Steady T = +25C 260 A Continuous Drain Current (Note 6) V = 5V I mA GS D State 210 T = +70C A Pulsed Drain Current (10s pulse, duty cycle = 1%) 800 mA I DM Maximum Body Diode Continuous Current (Note 6) 1 A I S Thermal Characteristics Characteristic Symbol Value Units (Note 5) 300 Total Power Dissipation mW P D (Note 6) 432 (Note 5) 398 Thermal Resistance, Junction to Ambient R JA (Note 6) 290 C/W (Note 5) Thermal Resistance, Junction to Case 142 R JC Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV 60 V V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current I 1.0 A V = 60V, V = 0V DSS DS GS Gate-Body Leakage I 5.0 A V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage 1.2 2.0 V V V = V , I = 250A GS(th) DS GS D 2 3 V = 10V, I = 0.115A GS D Static Drain-Source On-Resistance R DS (ON) 2.5 4 V = 5V, I = 0.115A GS D Forward Transconductance 80 290 mS g V = 10V, I = 0.115A FS DS D Diode Forward Voltage V - 0.8 1.2 V V = 0V, I = 115mA SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance C 22.0 iss Output Capacitance C 3.2 pF V = 25V, V = 0V, f = 1.0MHz oss DS GS Reverse Transfer Capacitance C 2.0 rss Gate Resistance R 79.9 V = 0V, V = 0V, f = 1.0MHz G DS GS Total Gate Charge V = 10V Q 0.87 GS g Total Gate Charge V = 4.5V Q 0.43 GS g V = 10V, V = 30V, GS DS nC Gate-Source Charge 0.11 I = 150mA Q D gs Gate-Drain Charge 0.11 Q gd Turn-On Delay Time 2.7 t D(on) Turn-On Rise Time 2.8 t V = 30V, I = 0.115A, V = 10V r DD D GEN , nS Turn-Off Delay Time t 12.6 R = 25 D(off) GEN Turn-Off Fall Time t 7.3 f Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout. 7 .Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. 2 of 5 July 2012 DMN65D8LW Diodes Incorporated www.diodes.com Document number: DS35639 Rev. 4 - 2