DMNH6042SPDQ 60V +175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Rated to +175CIdeal for High Ambient Temperature I Max D BV R Max DSS DS(ON) Environments T = +25C C 24A 50m V = 10V 100% Unclamped Inductive SwitchingEnsures More Reliable GS 60V 21A 65m V = 4.5V GS and Robust End Application Low R Minimizes Power Losses DS(ON) Low Q Minimizes Switching Losses G Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Description and Applications Mechanical Data This MOSFET is designed to meet the stringent requirements of Case: PowerDI 5060-8 (Type C) automotive applications. It is qualified to AEC-Q101, supported by a Case Material: Molded Plastic,Gree Molding Compound. PPAP, and is ideal for use in: UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 3 per J-STD-020 Engine Management Systems Terminal Connections Indicator: See Diagram Body Control Electronics Terminals: FinishMatte Tin Annealed over Copper Leadframe. DC-DC Converters Solderable per MIL-STD-202, Method 208 Weight: 0.097 grams (Approximate) D1 D2 S1 D1 G1 D1 G1 D2 S2 G2 D2 G2 S1 Pin1 S2 Top View Bottom View Pin Out Equivalent Circuit Top View Ordering Information (Note 5) Part Number Case Packaging DMNH6042SPDQ-13 PowerDI5060-8 (Type C) 2500/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See DMNH6042SPDQ Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 60 V DSS Gate-Source Voltage V 20 V GSS Steady T = +25C 5.7 A Continuous Drain Current (Note 7) V = 10V I A GS D State 4.6 T = +70C A 24 Steady T = +25C C Continuous Drain Current (Note 8) V = 10V I A GS D State T = +100C 17 C Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I 32 A DM Maximum Continuous Body Diode Forward Current (Note 8) I 24 A S Avalanche Current (Note 9) L = 10mH 3.5 A I AS Avalanche Energy (Note 9) L = 10mH 65 mJ E AS Thermal Characteristics ( TA = +25C, unless otherwise specified.) Characteristic Symbol Value Unit Total Power Dissipation (Note 6) P 1.2 W D Steady State 105 Thermal Resistance, Junction to Ambient (Note 6) R C/W JA t<10s 54 Total Power Dissipation (Note 7) P 2.5 W D Steady State 51 Thermal Resistance, Junction to Ambient (Note 7) R JA t<10s 26 C/W Thermal Resistance, Junction to Case (Note 8) R 3.5 JC Operating and Storage Temperature Range T T -55 to +175 C J, STG Notes: 6. Device mounted on FR-4 PCB, with minimum recommended pad layout, single sided. 7. Device mounted on FR-4 substrate PCB, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate. 8. Thermal resistance from junction to soldering point (on the exposed drain pad). 9. I and E ratings are based on low frequency and duty cycles to keep T = +25C. AS AS J 2 of 8 November 2018 DMNH6042SPDQ Diodes Incorporated www.diodes.com Document number: DS37388 Rev. 6 - 2