X-On Electronics has gained recognition as a prominent supplier of DMP1009UFDF-7 MOSFETs across the USA, India, Europe, Australia, and various other global locations. DMP1009UFDF-7 MOSFETs are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

DMP1009UFDF-7 Diodes Incorporated

Name: DMP1009UFDF-7
Brand: Diodes Incorporated
SKU: DMP1009UFDF7_Diodes Incorporated
Availability: InStock
Rating: 5 (11 reviews)

DMP1009UFDF-7 electronic component of Diodes Incorporated

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See Product Specifications

Part No.	DMP1009UFDF-7
Manufacturer:	Diodes Incorporated
Category:	MOSFETs
Description:	MOSFET MOSFETBVDSS: 8V-24V
Datasheet:	DMP1009UFDF-7 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

5: USD 0.1762 ea
Line Total: USD 0.88

Availability - 2644
Ship by Tue. 14 Jan to Fri. 17 Jan

MOQ: 5 Multiples: 5
Pack Size: 5

DMP1009UFDF-7 More Buying Options & Price Grid(s)

Please wait...

Availability Price Buy Price Quantity

2644

Ship by Tue. 14 Jan to Fri. 17 Jan

MOQ : 5
Multiples : 5

5 : USD 0.1762
50 : USD 0.1388
150 : USD 0.1179
500 : USD 0.1054
3000 : USD 0.0946
6000 : USD 0.0887

24049

Ship by Fri. 03 Jan to Tue. 07 Jan

MOQ : 1
Multiples : 1

1 : USD 0.429
10 : USD 0.3091
100 : USD 0.2376
500 : USD 0.2057
1000 : USD 0.1925
3000 : USD 0.165

Specifications

Manufacturer

Diodes Incorporated Diodes Incorporated

Product Category

MOSFETs MOSFETs

RoHS - XON

Y Y

Id - Continuous Drain Current

11 A 11 A

Vds - Drain-Source Breakdown Voltage

12 V 12 V

Rds On - Drain-Source Resistance

8.3 mOhms 8.3 mOhms

Transistor Polarity

P - Channel P - Channel

Vgs th - Gate-Source Threshold Voltage

1 V 1 V

Minimum Operating Temperature

- 55 C - 55 C

Maximum Operating Temperature

+ 150 C + 150 C

Pd - Power Dissipation

2 W 2 W

Mounting Style

Smd/Smt Smd/Smt

Package / Case

U - DFN2020 - 6 U - DFN2020 - 6

Packaging

Cut Tape Cut Tape

Technology

Si Si

Number of Channels

1 Channel 1 Channel

Vgs - Gate-Source Voltage

8 V 8 V

Qg - Gate Charge

44 nC 44 nC

Channel Mode

Enhancement Enhancement

Configuration

Single Single

Transistor Type

1 P - Channel 1 P - Channel

Brand

Diodes Incorporated Diodes Incorporated

Fall Time

61 ns 61 ns

Product Type

Mosfet Mosfet

Rise Time

10.6 ns 10.6 ns

Factory Pack Quantity :

3000 3000

Subcategory

Mosfets Mosfets

Typical Turn-Off Delay Time

62.2 ns 62.2 ns

Typical Turn-On Delay Time

7 ns 7 ns

Cnhts

8541290000 8541290000

Hts Code

8541290095 8541290095

Mxhts

85412999 85412999

Notes:- Show Stocked Products With Similar Attributes.

DMP1009UFDF-7 Alternative Parts

We are delighted to provide the DMP1009UFDF-7 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DMP1009UFDF-7 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The DMP1009UFDF-7 MOSFET manufactured by Diodes Incorporated is a surface mount device (SMD) power metal-oxide-semiconductor field-effect transistor (MOSFET). It is designed to provide efficient switching performance for high frequency applications such as switching power supplies, DC/DC converters, and high speed power management in consumer, industrial, and automotive electronics. This device is offered in a choice of dual N-Channel or single P-Channel configuration. It has a low gate-to-source threshold voltage of 2V and a maximum power dissipation of 0.35W. Its breakdown voltage (BVDSS) is 8V to 24V and it is specified for operation in temperatures from -55°C to +150°C.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

DIO may also be referenced as

Diodes
DIODES INC
DIODES INC / ZETEX
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PER
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Availability	Price	Buy Price	Quantity
2644 Ship by Tue. 14 Jan to Fri. 17 Jan MOQ : 5 Multiples : 5	5 : USD 0.1762 50 : USD 0.1388 150 : USD 0.1179 500 : USD 0.1054 3000 : USD 0.0946 6000 : USD 0.0887

24049 Ship by Fri. 03 Jan to Tue. 07 Jan MOQ : 1 Multiples : 1	1 : USD 0.429 10 : USD 0.3091 100 : USD 0.2376 500 : USD 0.2057 1000 : USD 0.1925 3000 : USD 0.165

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