DMP1081UCB4 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary (Typ. V = -4.5V, T = +25C) Features GS A LD-MOS Technology with the Lowest Figure of Merit: BV R Q Q I DSS DS(ON) g gd D R = 0.065 to Minimize On-State Losses DS(ON) -12V 0.065 2.5nC 0.6nC -3.3A Q = 2.5nC for Ultra-Fast Switching g V = -0.5V Typ. for a Low Turn-On Potential gs(TH) CSP with Footprint 1.0mm 1.0mm Description Height = 0.62mm for Low Profile ESD = 3kV HBM Protection of Gate This new generation MOSFET is designed to minimize the on-state Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) resistance (R ) and yet maintain superior switching performance, DS(ON) Halogen and Antimony Free. Green Device (Note 3) making it ideal for high efficiency power management applications. Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Applications Case: U-WLB1010-4 Battery Management Terminal Connections: See Diagram Below Load Switch Weight: 0.0018 grams (Approximate) Battery Protection U-WLB1010-4 D D ESD PROTECTED TO 3kV G S Top View Equivalent Circuit Ordering Information (Note 4) Part Number Case Packaging DMP1081UCB4-7 U-WLB1010-4 3,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMP1081UCB4 Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage -12 V V DSS Gate-Source Voltage -6 V V GSS Steady T = +25C -3.3 A Continuous Drain Current (Note 5) V = -4.5V I A GS D State -2.7 T = +70C A T = +25C Steady A -3.0 A Continuous Drain Current (Note 5) V = -2.5V I GS D State -2.4 T = +70C A Pulsed Drain Current (Note 6) 20 A I DM Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 7) P 0.82 W D Thermal Resistance, Junction to Ambient T = +25C (Note 7) R 150 C/W A JA Thermal Resistance, Junction to Case T = +25C (Note 7) R 42.66 C/W C JC Power Dissipation (Note 5) P 1.59 W D 80.29 C/W Thermal Resistance, Junction to Ambient T = +25C (Note 5) R A JA Operating and Storage Temperature Range -55 to +150 C T , T J STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage -12 - - V BV V = 0V, I = -250A DSS GS D Gate-Source Breakdown Voltage -6.0 - - V BV V = 0V, I = -250A GSS DS G Zero Gate Voltage Drain Current T = +25C I - - -1 A V = -9.6V, V = 0V J DSS DS GS Gate-Source Leakage I - - -100 nA V = -6V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage V -0.35 -0.5 -0.65 V V = V , I = -250A GS(TH) DS GS D - 0.065 0.08 V = -4.5V, I = -500mA GS D - 0.077 0.1 V = -2.5V, I = -500mA GS D Static Drain-Source On-Resistance R DS(ON) - 0.108 0.13 V = -1.5V, I = -500mA GS D - 0.4 10 V = -0.9V, I = -100mA GS D Forward Transfer Admittance - 4 - S Y V = -6V, I = -500mA fs DS D Diode Forward Voltage - -0.6 -1.0 V V V = 0V, I = -500mA SD GS S DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance - 213 350 C iss V = -6V, V = 0V, DS GS Output Capacitance - 119 250 pF C oss f = 1.0MHz Reverse Transfer Capacitance C - 54.4 90 rss Total Gate Charge Q - 2.5 5 g Gate-Source Charge Q - 0.3 - gs V = -4.5V, V = -6V, GS DS nC Gate-Drain Charge Q - 0.6 - I = -500mA gd D Gate Charge at V Q - 0.15 - TH g(TH) Turn-On Delay Time - 16.7 - t D(ON) Turn-On Rise Time - 20.6 - t V = -6V, V = -2.5V, R DS GS ns Turn-Off Delay Time - 38.4 - R = 20, I = -500mA t G D D(OFF) Turn-Off Fall Time - 28.4 - t F Reverse Recovery Charge - 2.0 - nC Q RR V = 4.0V, I = 0.5A, DD F di/dt =100A/s Reverse Recovery Time t - 9.5 - ns RR 2 2 Notes: 5. Device mounted on FR-4 material with 1inch (6.45cm ), 2oz. (0.071mm thick) Cu. 6. Repetitive rating, pulse width limited by junction temperature. 7. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to production testing. 2 of 6 DMP1081UCB4 August 2017 Diodes Incorporated www.diodes.com Document number: DS38597 Rev. 2 - 2