DMP2023UFDF 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features 0.6mm Profile Ideal for Low Profile Applications I max D V R max (BR)DSS DS(ON) 2 PCB Footprint of 4mm T = +25C A Low Gate Threshold Voltage 27m V = -4.5V GS -7.6A Fast Switching Speed 32m V = -2.5V -6.7A GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) -20V 50m V = -1.8V -5.2A Halogen and Antimony Free. Green Device (Note 3) GS 90m V = -1.5V -3.9A GS Description Mechanical Data This MOSFET is designed to minimize the on-state resistance Case: U-DFN2020-6 (Type F) (R ) and yet maintain superior switching performance, making it DS(ON) Case Material: Molded Plastic, Green Molding Compound. ideal for high-efficiency power management applications. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Battery Management Application Terminals: Finish NiPdAu over Copper Leadframe. Power Management Functions e4 Solderable per MIL-STD-202, Method 208 DC-DC Converters Weight: 0.007 Grams (Approximate) U-DFN2020-6 D G S Pin Out Top View Bottom View Bottom View Internal Schematic Ordering Information (Note 4) Part Number Marking Reel size (inches) Quantity per reel DMP2023UFDF-7 3F 7 3,000 DMP2023UFDF-13 3F 13 10,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMP2023UFDF Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V -20 V DSS Gate-Source Voltage V 8 V GSS T = +25C Steady A -7.6 A I D State -6.1 T = +70C A Continuous Drain Current (Note 6) V = -4.5V GS T = +25C -9.5 A t<5s I A D -7.6 T = +70C A Pulsed Drain Current (10 s pulse, duty cycle = 1%) I -40 A DM Continuous Source-Drain Diode Current T = +25C -2 A A I S Avalanche Current (Note 7) L = 0.1mH I - 23 A AS Repetitive Avalanche Energy (Note 7) L = 0.1mH 27 mJ E AS Thermal Characteristics Characteristic Symbol Value Units 0.73 T = +25C A Total Power Dissipation (Note 5) P W D T = +70C 0.47 A Steady State 171 Thermal Resistance, Junction to Ambient (Note 5) R C/W JA t<5s 112 T = +25C 2.03 A Total Power Dissipation (Note 6) P W D T = +70C 1.30 A Steady State 62 Thermal Resistance, Junction to Ambient (Note 6) R JA t<5s 40 C/W Thermal Resistance, Junction to Case (Note 6) Steady State R 9.3 JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BV -20 V V = 0V, I = -250A DSS GS D -1 A Zero Gate Voltage Drain Current T = +25C I V = -20V, V = 0V J DSS DS GS Gate-Source Leakage 100 nA I V = 5V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage -0.4 -1.0 V V V = V , I = -250A GS(th) DS GS D 27 V = -4.5V, I = -7.0A GS D 32 V = -2.5V, I = -5.0A GS D Static Drain-Source On-Resistance R m DS(ON) 50 V = -1.8V, I = -3.0A GS D 90 V = -1.5V, I = -1.0A GS D Diode Forward Voltage V -0.8 -1.2 V V = 0V, I = -1.0A SD GS S DYNAMIC CHARACTERISTICS (Note 9) 1837 Input Capacitance C iss V = -15V, V = 0V, DS GS 131 Output Capacitance C pF oss f = 1.0MHz 115 Reverse Transfer Capacitance C rss Gate Resistance R 14.8 V = 0V, V = 0V, f = 1MHz g DS GS 27 Total Gate Charge (V = -4.5V) Q GS g V = -15V, V = -4.5V, DS GS Gate-Source Charge 2.8 nC Q gs I = -4.0A D Gate-Drain Charge 3.1 Q gd 5.8 Turn-On Delay Time t D(on) 19.3 Turn-On Rise Time t V = -15V, V = -4.5V, r DS GS ns 168.5 Turn-Off Delay Time t R = 1 , I = -4.0A D(off) G D 77.3 Turn-Off Fall Time t f Reverse Recovery Time t 46.5 ns I = -1.0A, di/dt = 100A/s rr F Reverse Recovery Charge Q 33.8 nC I = -1.0A, di/dt = 100A/s rr F Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. I and E rating are based on low frequency and duty cycles to keep T = +25C. AS AS J 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. 2 of 7 January 2015 DMP2023UFDF Diodes Incorporated www.diodes.com Datasheet number: DS37249 Rev. 4 - 2