DMP2039UFDE Green P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low R Ensures on State Losses are Minimized DS(ON) I D V R Package (BR)DSS DS(ON) max 0.6mm Profile Ideal for Low Profile Applications T = +25C A 2 PCB Footprint of 4mm -6.7A 27m V = -4.5V ESD Protected Gate GS U-DFN2020-6 -25V Lead-Free Finish RoHS Compliant (Notes 1 & 2) Type E 40m V = -1.8V -5.4A GS Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description This new generation MOSFET has been designed to minimize the on- Mechanical Data state resistance (R ) and yet maintain superior switching DS(on) Case: U-DFN2020-6 Type E performance, making it ideal for high efficiency power management applications. Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Applications Terminal Connections: See Diagram Terminals: Finish NiPdAu over Copper leadframe. Solderable Load Switching e3 per MIL-STD-202, Method 208 Battery Management Application Weight: 0.001 grams (approximate) Power Management Functions Drain U-DFN2020-6 Type E Pin1 Gate Gate Protection Source Diode Bottom View Bottom View Equivalent Circuit ESD PROTECTED Internal Schematic Ordering Information (Note 4) Part Number Case Packaging DMP2039UFDE-7 U-DFN2020-6 Type E 3,000/Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See DMP2039UFDE Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V -25 V DSS Gate-Source Voltage V 8 V GSS Steady T = +25C -6.7 A I A D State -5.3 T = +70C A Continuous Drain Current (Note 5) V = -4.5V GS T = +25C -8.3 A t<5s A I D -6.6 T = +70C A Steady T = +25C -5.4 A I A D State -4.3 T = +70C A Continuous Drain Current (Note 5) V = -1.8V GS T = +25C -6.6 A t<5s A I D -5.2 T = +70C A Pulsed Drain Current (10s pulse, duty cycle = 1%) I -60 A DM Continuous Source-Drain Diode Current I -2.0 A S Thermal Characteristics Characteristic Symbol Value Units T = +25C 0.8 A Total Power Dissipation (Note 5) P W D T = +70C 1.2 A Steady state 160 Thermal Resistance, Junction to Ambient (Note 5) R C/W JA t<5s 104 T = +25C 2.0 A Total Power Dissipation (Note 6) P W D 2.9 T = +70C A Steady state 63 Thermal Resistance, Junction to Ambient (Note 6) R C/W JA t<5s 42 Thermal Resistance, Junction to Case (Note 6) Steady state R 10.8 C/W JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage -25 V BV V = 0V, I = -250A DSS GS D Zero Gate Voltage Drain Current -1 A I V = -25V, V = 0V DSS DS GS Gate-Source Leakage A I 10 V = 8.0V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage -0.4 -1.0 V V V = V , I = -250A GS(th) DS GS D 20 27 V = -4.5V, I = -6.4A GS D 24 34 V = -2.5V, I = -4.8A GS D Static Drain-Source On-Resistance R m DS (ON) 28 40 V = -1.8V, I = -2.5A GS D 33 70 V = -1.5V, I = -1.5A GS D Forward Transfer Admittance Y 16 S V = -5V, I = -4A fs DS D Diode Forward Voltage V -0.7 -1.0 V V = 0V, I = -1A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance C 2530 pF iss V = -15V, V = 0V DS GS Output Capacitance 203 pF C oss f = 1.0MHz Reverse Transfer Capacitance 177 pF C rss Gate Resistance 9.1 R V = 0V, V = 0V, f = 1.0MHz g DS GS Total Gate Charge (V = -4.5V) Q 28.2 nC GS g Total Gate Charge (V = -8V Q 48.7 nC GS g V = -15V, I = -4.0A DS D Gate-Source Charge Q 3.2 nC gs Gate-Drain Charge Q 5.0 nC gd Turn-On Delay Time t 15.1 ns D(on) Turn-On Rise Time t 23.5 ns r V = -15V, V = -4.5V, R = 1 , DD GS G Turn-Off Delay Time t 137.6 ns I = -4.0A D(off) D Turn-Off Fall Time 80.5 ns t f Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate 7. Short duration pulse test used to minimize self-heating effect 8. Guaranteed by design. Not subject to production testing. 2 of 6 July 2012 DMP2039UFDE Diodes Incorporated www.diodes.com Document number: DS35420 Rev. 5 - 2