NOT RECOMMENDED FOR NEW DESIGN USE DMP4011SPSQ Green DMP4015SPSQ 40V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits 100% Unclamped Inductive Switch (UIS) Test in Production I D V R Max (BR)DSS DS(ON) Low On-Resistance T = +25C A Fast Switching Speed 11m V = -10V -17.0A GS Lead-Free Finish RoHS Compliant (Notes 1 & 2) -40V Halogen and Antimony Free. Green Device (Note 3) -14.5A 15m V = -4.5V GS Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Description Mechanical Data This new generation MOSFET is designed to minimize the on-state Case: PowerDI 5060-8 resistance (R ) yet maintain superior switching performance, Case Material: Molded Plastic, Green Molding Compound. DS(ON) making it ideal for high-efficiency power management applications. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish100% Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Applications Weight: 0.097 grams (Approximate) DC-DC Converters Power Management Functions Analog Switch PowerDI5060-8 D S D Pin1 S D D G S D G S Top View Internal Schematic Bottom View Top View Pin Configuration Ordering Information (Note 5) Part Number Compliance Case Packaging DMP4015SPSQ-13 Automotive PowerDI5060-8 2,500/Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied. 2. See DMP4015SPSQ Marking Information D D D D = Manufacturers Marking P4015SP = Product Type Marking Code P4015SP YYWW = Date Code Marking YY = Year (ex: 18 = 2018) YY WW WW = Week (01 - 53) S S S G Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V -40 V DSS Gate-Source Voltage V 25 V GSS Steady T = +25C -8.5 A A I D State -6.8 T = +70C A Continuous Drain Current (Note 6) V = -10V GS T = +25C -13.0 A t<10s I A D -10.5 T = +70C A T = +25C Steady A -11.0 A I D State -8.7 T = +70C A Continuous Drain Current (Note 7) V = -10V GS T = +25C -17.0 A t<10s I A D -13.5 T = +70C A Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I -100 A DM Maximum Body Diode Continuous Current (Note 7) I -3.5 A S Avalanche Current (Note 8) -22 A I AS Avalanche Energy (Note 8) 242 mJ E AS Thermal Characteristics ( TA = +25C, unless otherwise specified.) Characteristic Symbol Value Units T = +25C 1.3 A Total Power Dissipation (Note 6) W P D T = +70C 0.8 A Steady State 96.4 C/W Thermal Resistance, Junction to Ambient (Note 6) R JA t<10s 40.6 C/W T = +25C 2.1 A Total Power Dissipation (Note 7) W P D 1.4 T = +70C A Steady State 55.0 C/W Thermal Resistance, Junction to Ambient (Note 7) R JA t<10s 24.0 C/W Thermal Resistance, Junction to Case (Note 7) 4.15 C/W R JC Operating and Storage Temperature Range -55 to +150 C T T J, STG Notes: 6. Device mounted on FR-4 PCB, with minimum recommended pad layout, single sided. 7. Device mounted on FR-4 substrate PCB, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 8. UIS in production with L = 0.1mH, TJ = +25C. 2 of 8 December 2018 DMP4015SPSQ Diodes Incorporated www.diodes.com Document number: DS36681 Rev. 4 - 3