X-On Electronics has gained recognition as a prominent supplier of DMP4015SSS-13 MOSFETs across the USA, India, Europe, Australia, and various other global locations. DMP4015SSS-13 MOSFETs are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

DMP4015SSS-13 Diodes Incorporated

DMP4015SSS-13 electronic component of Diodes Incorporated
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Part No.DMP4015SSS-13
Manufacturer: Diodes Incorporated
Category: MOSFETs
Description: Diodes Incorporated MOSFET MOSFET BVDSS: 41V-60 1V-60V SO-8 T&R 2.5K
Datasheet: DMP4015SSS-13 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
2500: USD 0.3524 ea
Line Total: USD 881 
Availability - 9700
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ: 2500  Multiples: 2500
Pack Size: 2500
Availability Price Quantity
1
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 2
Multiples : 1
2 : USD 0.3559

9700
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 2500
Multiples : 2500
2500 : USD 0.3524
5000 : USD 0.2953

1231
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 1
Multiples : 1
1 : USD 0.7087
10 : USD 0.5776
30 : USD 0.5121
100 : USD 0.4464
500 : USD 0.4084
1000 : USD 0.3872

16374
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.847
10 : USD 0.6644
100 : USD 0.4719
500 : USD 0.3806
1000 : USD 0.3487
2500 : USD 0.3377

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Series
Brand
Configuration
Transistor Type
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the DMP4015SSS-13 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DMP4015SSS-13 and other electronic components in the MOSFETs category and beyond.

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DMP4015SSS P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits 100% Unclamped Inductive Switch (UIS) Test in Production I D BV R DSS DS(ON) Max Low Input Capacitance T = +25C A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 11m V = -10V -10.1A GS Halogen and Antimony Free. Green Device (Note 3) -40V -8.8A 15m V = -4.5V GS Qualified to AEC-Q101 Standards for High Reliability Description and Application Mechanical Data Case: SO-8 This new generation MOSFET is designed to minimize the on-state resistance (R ) and yet maintain superior switching performance, Case Material: Molded Plastic, Green Molding Compound. DS(ON) making it ideal for high-efficiency power management applications. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 DC-DC Converters Terminal Connections: See Diagram Power Management Functions Terminals: Finish Matte Tin Annealed over Copper Leadframe. Analog Switch Solderable per MIL-STD-202, Method 208 Weight: 0.074 grams (Approximate) D SO-8 S D S D G S D G D Top View S Top View Equivalent circuit Internal Schematic Ordering Information (Note 4) Part Number Qualification Case Packaging DMP4015SSS-13 Standard SO-8 2,500/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMP4015SSS Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V -40 V DSS Gate-Source Voltage V 25 V GSS Steady T = +25C -9.1 A Continuous Drain Current (Note 5) V = -10V I A GS D State -7.2 T = +70C A Steady T = +25C -7.8 A A Continuous Drain Current (Note 5) V = -4.5V I GS D State -6.2 T = +70C A Steady T = +25C -10.1 A Continuous Drain Current (Note 6) V = -10V I A GS D State -8 TA = +70C Steady T = +25C -8.8 A A Continuous Drain Current (Note 6) V = -4.5V I GS D State -7 T = +70C A Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I -100 A DM Avalanche Current (Note 7) I -22 A AS Avalanche Energy (Note 7) E 242 mJ AS Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 5) 1.45 W P D Thermal Resistance, Junction to Ambient (Note 5) R 88 C/W JA Total Power Dissipation (Note 6) P 1.82 W D Thermal Resistance, Junction to Ambient (Note 6) R 70 C/W JA Thermal Resistance, Junction to Case (Note 6) R 7.6 C/W Jc Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BV -40 V V = 0V, I = -250A DSS GS D A Zero Gate Voltage Drain Current I -1 V = -40V, V = 0V DSS DS GS Gate-Source Leakage I 100 nA V = 25V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage V -1.5 -2 -2.5 V V = V , I = -250A GS(TH) DS GS D 7 11 V = -10V, I = -9.8A GS D Static Drain-Source On-Resistance R m DS(ON) 9 15 V = -4.5V, I = -9.8A GS D Forward Transfer Admittance 26 S Y V = -20V, I = -9.8A fs DS D Diode Forward Voltage (Note 5) V -0.7 -1 V SD V = 0V, I = -1A GS S DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance 4234 C iss V = -20V, V = 0V DS GS Output Capacitance 1036 pF C oss f = 1MHz Reverse Transfer Capacitance C 526 rss Gate Resistance R 7.77 V = 0V, V = 0V, f = 1MHz g DS GS Total Gate Charge Q 47.5 g V = -20V, V = -5V DS GS Gate-Source Charge Q 14.2 nC gs I = -9.8A D Gate-Drain Charge Q 13.5 gd Turn-On Delay Time 13.2 tD(ON) Turn-On Rise Time 10 t V = -10V, V = -20V, R = 6, R GS DD g ns Turn-Off Delay Time 302.7 I = -1A, R = 20 t D L D(OFF) Turn-Off Fall Time 137.9 t F Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate. 7 .UIS in production with L = 1mH, T = +25C. J 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to production testing. 2 of 7 DMP4015SSS January 2017 Diodes Incorporated www.diodes.com Document number: DS35416 Rev. 11 - 2 NEW PRODUCT

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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