DMTH10H010LCT
100V 175C N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary Features
Rated to +175C Ideal for High Ambient Temperature
I
D
BV R Package
DSS DS(ON)
Environments
T = +25C
C
Low Input Capacitance
100V 9.5m @V = 10V TO220AB 108A
GS
High BV Rating for Power Application
DSS
Low Input/Output Leakage
Description
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. Green Device (Note 3)
This new generation MOSFET features low on-resistance and fast
switching, making it ideal for high-efficiency power management Qualified to AEC-Q101 Standards for High Reliability
applications.
Mechanical Data
Applications
Case: TO220AB
Motor Control
Case Material: Molded Plastic, Green Molding Compound.
Backlighting
UL Flammability Classification Rating 94V-0
DC-DC Converters
Terminals: Matte Tin Finish Annealed over Copper Leadframe.
Power Management Functions Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram Below
Weight: TO220AB 1.85 grams (Approximate)
TO220AB
Top View
Top View Bottom View
Equivalent Circuit Pin Out Configuration
Ordering Information (Note 4)
Part Number Case Packaging
DMTH10H010LCT TO220AB 50 pieces/tube
Notes: 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied.
2. See
DMTH10H010LCT
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Drain-Source Voltage 100 V
V
DSS
Gate-Source Voltage 20 V
V
GSS
T = +25C 108
C
Continuous Drain Current I A
D
76
T = +100C
C
Maximum Continuous Body Diode Forward Current T = +25C I 90 A
C S
Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I 92 A
DM
Avalanche Current, L = 0.3mH (Note 7) 10 A
I
AS
Avalanche Energy, L = 0.3mH (Note 7) 15 mJ
E
AS
Thermal Characteristics
Characteristic Symbol Value Unit
Total Power Dissipation (Note 5) Steady State 2.4 W
P
D
Steady State
Thermal Resistance, Junction to Ambient (Note 5) R 61 C/W
JA
Total Power Dissipation 166 W
T = +25C P
C D
Thermal Resistance, Junction to Case R 0.9 C/W
JC
Operating and Storage Temperature Range T T -55 to +175 C
J, STG
Electrical Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage BV 100 V V = 0V, I = 1mA
DSS GS D
Zero Gate Voltage Drain Current 1 A
I V = 80V, V = 0V
DSS DS GS
Gate-Source Leakage 100 nA
I V = 20V, V = 0V
GSS GS DS
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage 1.4 1.9 3.5 V
V V = V , I = 250A
GS(TH) DS GS D
Static Drain-Source On-Resistance 6.9 9.5 m
R V = 10V, I = 13A
DS(ON) GS D
Diode Forward Voltage 0.8 1.3 V
V V = 0V, I = 13A
SD GS S
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance 4166
C
iss
V = 50V, V = 0V
DS GS
Output Capacitance 764 pF
C
oss
f = 1MHz
44
Reverse Transfer Capacitance C
rss
2
Gate Resistance R V = 0V, V = 0V, f = 1MHz
G DS GS
58.4
Total Gate Charge Q
g
V = 50V, I = 13A,
DD D
11.4
Gate-Source Charge nC
Qgs
V = 10V
GS
14.2
Gate-Drain Charge
Q
gd
Turn-On Delay Time 11.6
t
D(ON)
Turn-On Rise Time 14.1
t V = 50V, V = 10V,
R DD GS
ns
Turn-Off Delay Time 42.9 I = 13A, R = 6
t D G
D(OFF)
Turn-Off Fall Time 22
t
F
49.8
Reverse Recovery Time t ns
RR
I = 13A, di/dt = 100A/s
F
85.1
Reverse Recovery Charge Q nC
RR
Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.
2 of 6
February 2018
DMTH10H010LCT
www.diodes.com Diodes Incorporated
Document number: DS38444 Rev. 3 - 2