DSL12AW 12V LOW V PNP SURFACE MOUNT TRANSISTOR CE(sat) Features Mechanical Data Epitaxial Planar Die Construction Case: SOT-363 Ideal for Low Power Amplification and Switching Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Ultra Small Surface Mount Package Moisture Sensitivity: Level 1 per J-STD-020 Lead Free, RoHS Compliant (Note 1) Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe. Halogen and Antimony FreeGree Device (Note 2) Solderable per MIL-STD-202, Method 208 ESD rating: 400V-MM, 8KV-HBM Weight: 0.006 grams (approximate) 65 4 1, 2, 5, 6 3 12 3 4 Top View Top View Top View Device Schematic Pin Out Configuration Ordering Information Part Number Case Packaging DSL12AW-7 SOT-363 3000/Tape & Reel Notes: 1. No purposefully added lead. 2. Diodes Inc sGree policy can be found on our website at DSL12AW Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Collector-Base Voltage V -12 V CBO Collector-Emitter Voltage V -12 V CEO Emitter-Base Voltage V -5 V EBO Collector Current - Continuous I -2 A C Peak Pulse Collector Current I -3 A CM Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 3) T = 25C P 450 mW A D Thermal Resistance, Junction to Ambient (Note 3) T = 25C 275 C/W A R JA 650 mW Power Dissipation (Note 4) T = 25C P A D Thermal Resistance, Junction to Ambient (Note 3) T = 25C 192 C/W A R JA Operating and Storage Temperature Range -55 to +150 T , T C J STG Notes: 3. Device mounted on FR-4 PCB, with minimum recommended pad layout. 4. Device mounted on FR-4 PCB, mounted on 25mmx25mm square pad 1oz coverage of copper 0.8 10 Pw = 100s 0.6 1 0.4 Note 4 0.1 Note 3 0.01 0.2 0 0.001 050 100 150 200 0.1 1 10 100 T , AMBIENT TEMPERATURE (C) V , COLLECTOR EMITTER VOLTAGE (V) A CE Fig. 1 Power Dissipation vs. Ambient Temperature Fig. 2 Safe Operating Area 1 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 R (t) = r(t) * R JA JA R = 188C/W JA D = 0.02 0.01 P(pk) D = 0.01 t 1 t D = 0.005 2 T - T = P * R (t) JA JA Duty Cycle, D = t /t 12 D = Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 10,000 t , PULSE DURATION TIME (s) 1 Fig. 3 Transient Thermal Response 2 of 6 February 2011 DSL12AW Diodes Incorporated www.diodes.com Document Number: DS31644 Rev. 2 - 2 ADVANCE INFORMATION P , POWER DISSIPATION (W) D r(t), TRANSIENT THERMAL RESISTANCE I, COLLECTOR CURRENT (A) C