DTM3A25P20NFDB-7 Diodes Incorporated

DTM3A25P20NFDB 25V PNP LOW SAT TRANSISTOR WITH N-CHANNEL MOSFET Features Mechanical Data Combination of PNP low V Transistor and N-Channel Case: U-DFN2020-6 (Type B) CE(sat) MOSFET UL Flammability Rating 94V-0 Very low collector-emitter saturation voltage V CE(sat) Case Material: Molded Plastic. Green Molding Compound. High Collector Current Capability I and I C CM Moisture Sensitivity: Level 1 per J-STD-020 High Collector Current Gain (h ) at high I FE C Terminals: Finish - NiPdAu, Solderable per MIL-STD-202, P up to 2.47W for power demanding applications D e4 Method 208 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Weight: 0.007 grams (Approximate) Halogen and Antimony Free. Green Device (Note 3) U-DFN2020-6 (Type B) C G S 6 C D 1 E B D Top View Top View Device Symbol Pin-Out Ordering Information (Note 4) Product Marking Reel size (inches) Tape width (mm) Quantity per reel DTM3A25P20NFDB-7 1W1 7 8 3,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DTM3A25P20NFDB BJT Absolute Maximum Ratings (@T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage -35 V V CBO Collector-Emitter Voltage -25 V V CEO Emitter-Base Voltage V -7 V EBO Continuous Collector Current I -3 A C Peak Pulse Current I -6 A CM Base Current I -500 mA B MOSFET Absolute Maximum Ratings (@T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V 20 V DSS Gate-Source Voltage V 6 V GSS Continuous Drain Current (Note 5) VGS = 10 V @T = +25C 0.63 A I A D 0.45 @T = +85C A Pulsed Drain Current 6 A I DM Thermal Characteristics (@T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit (Notes 5 & 7) 405 (Notes 5 & 8) 510 Power Dissipation PD mW (Notes 6 & 7) 1,650 (Notes 6 & 8) 2,470 (Notes 5 & 7) 308 (Notes 5 & 8) 245 Thermal Resistance, Junction to Ambient C/W R JA (Notes 6 & 7) 76 (Notes 6 & 8) 51 Thermal Resistance, Junction to Lead (Note 9) 18 C/W R JL Operating and Storage Temperature Range T T -55 to +150 C J, STG ESD Ratings (Note 10) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge Human Body Model ESD HBM 3,000 V 3A Electrostatic Discharge Machine Model ESD MM 200 V C Notes: 5. For a device mounted with the exposed collector pads on minimum recommended pad layout that is on a single-sided 1.6mm FR4 PCB; device is measured under still air conditions whilst operating in a steady-state. 2 6. Same as note (5), except the device is mounted with the collector pad on 28mm x 28mm (8cm ) 2oz copper. 7. For a dual device with one active die. 8. For dual device with 2 active die running at equal power. 9. Thermal resistance from junction to solder-point (on the exposed collector pads). 10. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 2 of 10 DTM3A25P20NFDB January 2016 Diodes Incorporated www.diodes.com Datasheet Number: DS38017 Rev.1 - 2