DTM3A25P20NFDB
25V PNP LOW SAT TRANSISTOR WITH N-CHANNEL
MOSFET
Features Mechanical Data
Combination of PNP low V Transistor and N-Channel Case: U-DFN2020-6 (Type B)
CE(sat)
MOSFET
UL Flammability Rating 94V-0
Very low collector-emitter saturation voltage V
CE(sat)
Case Material: Molded Plastic. Green Molding Compound.
High Collector Current Capability I and I
C CM
Moisture Sensitivity: Level 1 per J-STD-020
High Collector Current Gain (h ) at high I
FE C
Terminals: Finish - NiPdAu, Solderable per MIL-STD-202,
P up to 2.47W for power demanding applications
D
e4
Method 208
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Weight: 0.007 grams (Approximate)
Halogen and Antimony Free. Green Device (Note 3)
U-DFN2020-6
(Type B)
C G S
6
C D
1
E B D
Top View
Top View Device Symbol
Pin-Out
Ordering Information (Note 4)
Product Marking Reel size (inches) Tape width (mm) Quantity per reel
DTM3A25P20NFDB-7 1W1 7 8 3,000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See
DTM3A25P20NFDB
BJT Absolute Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Collector-Base Voltage -35 V
V
CBO
Collector-Emitter Voltage -25 V
V
CEO
Emitter-Base Voltage V -7 V
EBO
Continuous Collector Current I -3 A
C
Peak Pulse Current I -6 A
CM
Base Current I -500 mA
B
MOSFET Absolute Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Drain-Source Voltage V 20 V
DSS
Gate-Source Voltage V 6 V
GSS
Continuous Drain Current (Note 5) VGS = 10 V @T = +25C 0.63
A
I A
D
0.45
@T = +85C
A
Pulsed Drain Current 6 A
I
DM
Thermal Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
(Notes 5 & 7) 405
(Notes 5 & 8) 510
Power Dissipation PD mW
(Notes 6 & 7) 1,650
(Notes 6 & 8) 2,470
(Notes 5 & 7) 308
(Notes 5 & 8) 245
Thermal Resistance, Junction to Ambient C/W
R
JA
(Notes 6 & 7) 76
(Notes 6 & 8) 51
Thermal Resistance, Junction to Lead (Note 9) 18 C/W
R
JL
Operating and Storage Temperature Range T T -55 to +150 C
J, STG
ESD Ratings (Note 10)
Characteristic Symbol Value Unit JEDEC Class
Electrostatic Discharge Human Body Model ESD HBM 3,000 V 3A
Electrostatic Discharge Machine Model ESD MM 200 V C
Notes: 5. For a device mounted with the exposed collector pads on minimum recommended pad layout that is on a single-sided 1.6mm FR4 PCB; device is
measured under still air conditions whilst operating in a steady-state.
2
6. Same as note (5), except the device is mounted with the collector pad on 28mm x 28mm (8cm ) 2oz copper.
7. For a dual device with one active die.
8. For dual device with 2 active die running at equal power.
9. Thermal resistance from junction to solder-point (on the exposed collector pads).
10. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
2 of 10
DTM3A25P20NFDB January 2016
Diodes Incorporated
www.diodes.com
Datasheet Number: DS38017 Rev.1 - 2