MMBTH10 NPN SURFACE MOUNT VHF/UHF TRANSISTOR Features Designed for VHF/UHF Amplifier Applications and High Output VHF Oscillators SOT-23 C High Current Gain Bandwidth Product Dim Min Max Ideal for Mixer and RF Amplifier Applications with A 0.37 0.51 collector currents in the 100A - 30 mA Range B E Lead, Halogen and Antimony Free, RoHS Compliant B 1.20 1.40 Gree Device (Notes 3 and 4) C 2.30 2.50 Qualified to AEC-Q101 Standards for High D 0.89 1.03 Reliability E 0.45 0.60 Mechanical Data G 1.78 2.05 Case: SOT-23 H 2.80 3.00 Case Material: Molded Plastic. UL Flammability J 0.013 0.10 Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D K 0.903 1.10 Terminals: Solderable per MIL-STD-202, Method 208 L 0.45 0.61 Terminal Connections: See Diagram M 0.085 0.180 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). 0 8 Marking Information: K3H, K3Y See Page 3 All Dimensions in mm Ordering Information: See Page 3 Weight: 0.008 grams (approximate) Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Collector-Base Voltage V 30 V CBO Collector-Emitter Voltage V 25 V CEO Emitter-Base Voltage 3.0 V V EBO Collector Current - Continuous (Note 1) I 50 mA C Power Dissipation (Note 1) P 300 mW D Thermal Resistance, Junction to Ambient (Note 1) 417 R C/W JA Operating and Storage Temperature Range T , T -55 to +150 C J STG Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Max Unit Test Condition OFF CHARACTERISTICS (Note 2) Collector-Emitter Breakdown Voltage 25 V V I = 1mA, I = 0 (BR)CEO C B Collector-Base Breakdown Voltage V 30 V I = 100A, I = 0 (BR)CBO C E Emitter-Base Breakdown Voltage V 3.0 V I = 10A, I = 0 (BR)EBO E C Collector Cutoff Current 100 nA I V = 25V, I = 0 CBO CB E Emitter Cutoff Current I 100 nA V = 2V, I = 0 EBO EB C ON CHARACTERISTICS (Note 2) DC Current Gain h 60 I = 4mA, V = 10.0V FE C CE Collector-Emitter Saturation Voltage 0.5 V V I = 4mA, I = 400A CE(SAT) C B Base-Emitter On Voltage V 0.95 V I = 4mA, V = 10.0V BE(SAT) C CE SMALL SIGNAL CHARACTERISTICS Current Gain-Bandwidth Product f 650 MHz V = 10V, f = 100MHz, I = 4mA T CE C Collector-Base Capacitance C 0.7 pF V = 10V, f = 1.0MHz, I = 0 CB CB E Collector-Base Feedback Capacitance C 0.65 pF V = 10V, f = 1.0MHz, I = 0 RB CB E Collector-Base Time Constant RbCc 9 ps V = 10V, f = 31.8MHz, I = 4mA CB C Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch, pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at DS31031 Rev. 12 - 2 2 of 3 MMBTH10 Diodes Incorporated www.diodes.com