X-On Electronics has gained recognition as a prominent supplier of MMBTH10Q-7-F RF Bipolar Transistors across the USA, India, Europe, Australia, and various other global locations. MMBTH10Q-7-F RF Bipolar Transistors are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for RF Bipolar Transistors, ensuring timely deliveries around the world.

MMBTH10Q-7-F Diodes Incorporated

MMBTH10Q-7-F electronic component of Diodes Incorporated
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Part No.MMBTH10Q-7-F
Manufacturer: Diodes Incorporated
Category: RF Bipolar Transistors
Description: RF Bipolar Transistors RF Transistor
Datasheet: MMBTH10Q-7-F Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.528 ea
Line Total: USD 0.53 
Availability - 2927
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2927
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 0.528
100 : USD 0.4488
1000 : USD 0.3124
3000 : USD 0.1276
9000 : USD 0.0968
24000 : USD 0.0946
99000 : USD 0.0935

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Type
Technology
Transistor Polarity
Operating Frequency
DC Collector/Base Gain hFE Min
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Continuous Collector Current
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Configuration
Qualification
Brand
Product Type
Factory Pack Quantity :
Subcategory
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MMBTH10Q-7-F from our RF Bipolar Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MMBTH10Q-7-F and other electronic components in the RF Bipolar Transistors category and beyond.

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MMBTH10Q 25V NPN SURFACE MOUNT VHF/UHF TRANSISTOR IN SOT23 Description Mechanical Data Case: SOT23 This bipolar junction transistor (BJT) is designed to meet the stringent Case Material: Molded Plastic, Green Molding Compound requirements of automotive applications. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Features Terminals: FinishMatte Tin Plated Leads, Solderable per MIL- STD-202, Method 208 BV > 25V CEO Weight: 0.008 grams (Approximate) I = 50mA Continuous Collector Current C Designed for VHF/UHF Amplifier Applications and High Output VHF Oscillators High Current Gain Bandwidth Product Ideal for Mixer and RF Amplifier Applications with Collector Currents in the 100A to 30mA Range Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free.Gree Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) SOT23 Top View Top View Device Symbol Pin-Out Ordering Information (Note 5) Part Number Compliance Marking Reel Size (inches) Tape Width (mm) Quantity Per Reel MMBTH10Q-7-F Automotive K3Y 7 8 3000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See MMBTH10Q Absolute Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage V 30 V CBO Collector-Emitter Voltage V 25 V CEO Emitter-Base Voltage V 3 V EBO Collector Current 50 mA I C Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit (Note 6) 310 Power Dissipation mW P D (Note 7) 350 (Note 6) 403 Thermal Resistance, Junction to Ambient C/W R JA (Note 7) 357 Thermal Resistance, Junction to Leads (Note 8) R 350 C/W JL Operating and Storage Temperature Range T T -65 to +150 C J, STG Notes: 6. For a device mounted on minimum recommended pad layout FR-4 PCB with high coverage of single sided 1oz copper device is measured under still air conditions whilst operating in a steady-state. 7. Same as Note 6, except mounted on 15mm 15mm 1oz copper. 8. Thermal resistance from junction to solder-point (at the end of the collector lead). Thermal Characteristics and Derating Information 0.4 400 350 0.3 300 250 D=0.5 0.2 200 150 D=0.1 Single Pulse D=0.2 0.1 100 50 D=0.05 0.0 0 0 25 50 75 100 125 150 100 1m 10m 100m 1 10 100 1k o Pulse Width (s) Temperature ( C) Transient Thermal Impedance Derating Curve 10 o Single Pulse. T =25 C A 1 0.1 10m 100m 1 10 100 1k Pulse Width (s) Pulse Power Dissipation 2 of 6 December 2018 MMBTH10Q Diodes Incorporated www.diodes.com Document number: DS40731 Rev. 4 - 2 Max Power Dissipation (W) Max Power Dissipation (W) o Thermal Resistance ( C/W)

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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