Near Ultraviolet (NUV) SiPMs Silicon photomultipliers (SiPMs) from First Sensor are innovative solid-state silicon detectors with single photon sensitivity. SiPMs are a valid alternative to photomultiplier tubes. The main benefits of these detectors are high gain, extremely good timing performance and low operating voltage. They are insensitive to magnetic field and have a high integration level. The detectors are optimized for Near Ultraviolet (NUV) light detection. Features Applications Certificates NUV light detection from 350 to 900 nm High energy physics RoHS compliant (2011/65/EU) (peak efficiency at 420 nm) Medical imaging Afterpulsing probability <4 % Nuclear medicine 2 Dark Count Rate <100 kHz/mm Homeland security Superior breakdown voltage uniformity Analytical instruments Excellent temperature stability Detection of extremely faint light 6 Very high gain (10 ) Extremely good timing performance Insensitive to magnetic fields Not damaged by ambient light Small and compact Nickel free Chip Scale Package (CSP) Version 16-02-18 Subject to change without notice www.first-sensor.com contact first-sensor.com Page 1/8Near Ultraviolet (NUV) SiPMs (1) Absolute maximum ratings Parameter Min. Max. Unit Operating temperature (T ) -25 +40 C A Storage temperature (T ) -40 +60 C S Lead temperature (solder) 5 s (T ) +250 C Sol Voltage working range (MVW) Breakdown voltage +6 V Typical characteristics Parameter Product SiPM-NUV1S-SMD SiPM-NUV1C-SMD SiPM-NUV3S-SMD SiPM-NUV4S-SMD 2 2 2 2 Effective active area (11) mm 1.13 mm (33) mm (44) mm Cell count 625 673 5520 9340 Cell size (pitch) 40 m 40 m Cell fill-factor 60 % Quenching resistance 800 k Cell capacitance 90 fF Recharge time constant 70 ns Spectral response range 350 ... 900 nm Peak sensitivity wavelength 420 nm (2) Photon detection efficiency 43 % Breakdown voltage (BV) typ. 26 V, min. 24 V, max. 28 V (3) BV standard deviation 50 mV (4) Recommended overvoltage range (OV) min: 2 V, max: 6 V (5) 2 2 Dark count rate <50 kHz/mm 2 V OV, <100 kHz/mm 6 V OV (6) 6 Gain 3.610 Breakdown voltage temperature coefficient 26 mV/C (7) Refractive index of epoxy resin 1.5115 ( 589 nm, 23 C, uncured) (7) Spectral transmission of epoxy resin >97% 1000 ... 1600 nm >99% 400 ... 1000 nm Specification notes (3) BV of SiPMs belonging to a same production lot are within 200 mV (2) from (1) Stresses beyond those listed under Absolute Maximum Ratings may cause mean BV value. permanent damage to the device. These are stress ratings only, and functional (4) Operating voltage (SiPM bias) is BV+OV, to be applied in reverse mode, i.e. operation of the device at these or any other conditions beyond those indicated V <0 (see Pins Function section). in the operational sections of the specifications is not implied. Exposure to AK (5) 0.5 p.e. threshold level at 20 C (primary dark count rate not including afterpulse). absolute maximum rated conditions for extended periods may affect device (6) Measured at 20 C at +6 V overvoltage. reliability. (7) To be used as a guide only, not as a specification. Reported data is not guaranteed. (2) Measured at peak sensitivity wavelength (= ) at +6 V overvoltage (not p including afterpulse and crosstalk). Version 16-02-18 Subject to change without notice www.first-sensor.com contact first-sensor.com Page 2/8