X-On Electronics has gained recognition as a prominent supplier of BC547 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BC547 Bipolar Transistors - BJT are a product manufactured by Generic. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

BC547 Generic

BC547 electronic component of Generic
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Part No.BC547
Manufacturer: Generic
Category: Bipolar Transistors - BJT
Description: TRANS NPN 45V 100MA TO-92 ELECTRONICS PART
Datasheet: BC547 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.0605 ea
Line Total: USD 0.06 
Availability - 0
Ship by Fri. 22 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 22 Nov
MOQ : 1
Multiples : 1
1 : USD 0.0605
10 : USD 0.0302
25 : USD 0.0272
100 : USD 0.0227
500 : USD 0.0204

   
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BC547 / BC547A / BC547B / BC547C Discrete POWER & Signal Technologies BC547 BC547A BC547B BC547C E TO-92 B C NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100A for characteristics. Absolute Maximum Ratings* TA = 25C unless otherwise noted Symbol Parameter Value Units V Collector-Emitter Voltage 45 V CEO V Collector-Base Voltage 50 V CES V Emitter-Base Voltage 6.0 V EBO I Collector Current - Continuous 500 mA C Operating and Storage Junction Temperature Range -55 to +150 C T , T J stg *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25C unless otherwise noted Symbol Characteristic Max Units BC547 / A / B / C P Total Device Dissipation 625 mW D Derate above 25 C 5.0 mW/ C R Thermal Resistance, Junction to Case 83.3 C/W JC Thermal Resistance, Junction to Ambient 200 R C/W JA 1997 Fairchild Semiconductor Corporation 547ABC, Rev BBC547 / BC547A / BC547B / BC547C NPN General Purpose Amplifier (continued) Electrical Characteristics TA = 25C unless otherwise noted Symbol Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V Collector-Emitter Breakdown Voltage I = 1.0 mA, I = 0 45 V (BR)CEO C B V Collector-Base Breakdown Voltage 50 V I = 10 A, I = 0 (BR)CBO C E V Collector-Base Breakdown Voltage I = 10 A, I = 0 50 V (BR)CES C E V Emitter-Base Breakdown Voltage I = 10 A, I = 0 6.0 V (BR)EBO E C I Collector Cutoff Current V = 30 V, I = 0 15 nA CBO CB E V = 30 V, I = 0, T = +150 C 5.0 A CB E A ON CHARACTERISTICS h DC Current Gain V = 5.0 V, I = 2.0 mA 547 110 800 FE CE C 547A 110 220 547B 200 450 547C 420 800 V Collector-Emitter Saturation Voltage I = 10 mA, I = 0.5 mA 0.25 V C B CE(sat) I = 100 mA, I = 5.0 mA 0.60 V C B Base-Emitter On Voltage V = 5.0 V, I = 2.0 mA 0.58 0.70 V V CE C BE(on) V = 5.0 V, I = 10 mA 0.77 V CE C SMALL SIGNAL CHARACTERISTICS Small-Signal Current Gain I = 2.0 mA, V = 5.0 V, 125 900 h C CE fe f = 1.0 kHz NF Noise Figure V = 5.0 V, I = 200 A, 10 dB CE C R = 2.0 k , f = 1.0 kHz, S B = 200 Hz W

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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