2N7638-GA Normally OFF Silicon Carbide V = 600 V DS Junction Transistor R = 170 m DS(ON) I = 20 A D (Tc = 25C) h = 110 FE (Tc = 25C) Features Package 210C maximum operating temperature RoHS Compliant Electrically Isolated Base Plate Gate Oxide Free SiC Switch S D Exceptional Safe Operating Area Excellent Gain Linearity G G Compatible with 5 V TTL Gate Drive D Temperature Independent Switching Performance Low Output Capacitance S Positive Temperature Coefficient of R DS,ON Suitable for Connecting an Anti-parallel Diode SMD0.5 / TO 276 (Hermetic Package) Advantages Applications Compatible with Si MOSFET/IGBT Gate Drive ICs Down Hole Oil Drilling > 20 s Short-Circuit Withstand Capability Geothermal Instrumentation Lowest-in-class Conduction Losses Solenoid Actuators High Circuit Efficiency General Purpose High-Temperature Switching Minimal Input Signal Distortion Amplifiers High Amplifier Bandwidth Solar Inverters Switched-Mode Power Supply (SMPS) Power Factor Correction (PFC) Table of Contents Section I: Absolute Maximum Ratings ...........................................................................................................1 Section II: Static Electrical Characteristics ....................................................................................................2 Section III: Dynamic Electrical Characteristics .............................................................................................2 Section IV: Figures ...........................................................................................................................................3 Section V: Driving the 2N7638-GA ..................................................................................................................5 Section VI: Package Dimensions: ...................................................................................................................8 Section VII: SPICE Model Parameters ............................................................................................................9 Section I: Absolute Maximum Ratings Parameter Symbol Conditions Values Unit Drain Source Voltage V V = 0 V 600 V DS GS T = 210C, T = 25C Continuous Drain Current I J C 20 A D Continuous Gate Current IGM 1.25 A I = 20 T = 210C, I = 1.25 A, D,max VJ G Turn-Off Safe Operating Area RBSOA A Clamped Inductive Load V V DS DSmax T = 210C, I = 1.25 A, V = 400 V, VJ G DS Short Circuit Safe Operating Area SCSOA >20 s Non Repetitive Reverse Gate Source Voltage V 30 V GS Reverse Drain Source Voltage V 40 V DS Power Dissipation P T = 210C, T = 25C 200 W tot J C Operating and Storage Temperature T , T -55 to 210 C j stg Dec 2014 2N7638-GA Section II: Static Electrical Characteristics Values Parameter Symbol Conditions Unit min. typ. max. A: On State I = 7 A, T = 25 C D j 170 Drain Source On Resistance R I = 7 A, T = 175 C m DS(ON) D j 320 I = 7 A, T = 210 C 440 D j I = 10 A, I /I = 40, T = 25 C 3.50 D D G j Gate Source Saturation Voltage V V GS,SAT ID = 10 A, ID/IG = 30, Tj = 175 C 3.27 V = 5 V, I = 10 A, T = 25 C 80 110 DS D j DC Current Gain h FE V = 5 V, I = 10 A, T = 210 C 50 80 DS D j B: Off State V = 600 V, V = 0 V, T = 25 C R GS j 10 100 V = 600 V, V = 0 V, T = 175 C Drain Leakage Current IDSS R GS j 40 400 A V = 600 V, V = 0 V, T = 210 C 100 600 R GS j C: Thermal Thermal resistance, junction - case R 1.0 C/W thJC Section III: Dynamic Electrical Characteristics Values Parameter Symbol Conditions Unit min. typ. max. A: Capacitance and Gate Charge Input Capacitance C V = 0 V, V = 500 V, f = 1 MHz 685 pF iss GS D Reverse Transfer/Output Capacitance C /C V = 500 V, f = 1 MHz 24 pF rss oss D V = 0 V, V = 500 V, f = 1 MHz Output Capacitance Stored Energy E GS D 3.1 J OSS Effective Output Capacitance, I = constant, V = 0 V, V = D GS DS C 50 pF oss,tr 0400 V time related Effective Output Capacitance, C V = 0 V, V = 0400 V 37 pF oss,er GS DS energy related Gate-Source Charge Q V = -53 V 11 nC GS GS Gate-Drain Charge Q V = 0 V, V = 0400 V 20 nC GD GS DS Gate Charge - Total Q 31 nC G B: Switching Turn On Delay Time t 10 ns d(on) Rise Time t 30 ns r T = 175 C, V = 400 V, j DS Turn Off Delay Time t 75 ns d(off) I = 7 A, Inductive Load D Fall Time t 40 ns f Refer to Section V for additional Turn-On Energy Per Pulse E 35 J on driving information. Turn-Off Energy Per Pulse E 65 J off Total Switching Energy E 100 J ts Turn On Delay Time t 10 ns d(on) Rise Time t 30 ns r T = 210 C, V = 400 V, j DS Turn Off Delay Time t 75 ns d(off) I = 7 A, Inductive Load D Fall Time t 60 ns f Refer to Section V for additional Turn-On Energy Per Pulse E 45 J on driving information. Turn-Off Energy Per Pulse E 80 J off Total Switching Energy E 125 J ts Dec 2014