X-On Electronics has gained recognition as a prominent supplier of 2N7638-GA Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2N7638-GA Bipolar Transistors - BJT are a product manufactured by GeneSiC Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2N7638-GA GeneSiC Semiconductor

2N7638-GA electronic component of GeneSiC Semiconductor
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Part No.2N7638-GA
Manufacturer: GeneSiC Semiconductor
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT SiC High Temp SJT 650V 8A 225 Degree C
Datasheet: 2N7638-GA Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 122.0732 ea
Line Total: USD 122.07 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 1
Multiples : 1
1 : USD 122.0732

   
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We are delighted to provide the 2N7638-GA from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N7638-GA and other electronic components in the Bipolar Transistors - BJT category and beyond.

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2N7638-GA Normally OFF Silicon Carbide V = 600 V DS Junction Transistor R = 170 m DS(ON) I = 20 A D (Tc = 25C) h = 110 FE (Tc = 25C) Features Package 210C maximum operating temperature RoHS Compliant Electrically Isolated Base Plate Gate Oxide Free SiC Switch S D Exceptional Safe Operating Area Excellent Gain Linearity G G Compatible with 5 V TTL Gate Drive D Temperature Independent Switching Performance Low Output Capacitance S Positive Temperature Coefficient of R DS,ON Suitable for Connecting an Anti-parallel Diode SMD0.5 / TO 276 (Hermetic Package) Advantages Applications Compatible with Si MOSFET/IGBT Gate Drive ICs Down Hole Oil Drilling > 20 s Short-Circuit Withstand Capability Geothermal Instrumentation Lowest-in-class Conduction Losses Solenoid Actuators High Circuit Efficiency General Purpose High-Temperature Switching Minimal Input Signal Distortion Amplifiers High Amplifier Bandwidth Solar Inverters Switched-Mode Power Supply (SMPS) Power Factor Correction (PFC) Table of Contents Section I: Absolute Maximum Ratings ...........................................................................................................1 Section II: Static Electrical Characteristics ....................................................................................................2 Section III: Dynamic Electrical Characteristics .............................................................................................2 Section IV: Figures ...........................................................................................................................................3 Section V: Driving the 2N7638-GA ..................................................................................................................5 Section VI: Package Dimensions: ...................................................................................................................8 Section VII: SPICE Model Parameters ............................................................................................................9 Section I: Absolute Maximum Ratings Parameter Symbol Conditions Values Unit Drain Source Voltage V V = 0 V 600 V DS GS T = 210C, T = 25C Continuous Drain Current I J C 20 A D Continuous Gate Current IGM 1.25 A I = 20 T = 210C, I = 1.25 A, D,max VJ G Turn-Off Safe Operating Area RBSOA A Clamped Inductive Load V V DS DSmax T = 210C, I = 1.25 A, V = 400 V, VJ G DS Short Circuit Safe Operating Area SCSOA >20 s Non Repetitive Reverse Gate Source Voltage V 30 V GS Reverse Drain Source Voltage V 40 V DS Power Dissipation P T = 210C, T = 25C 200 W tot J C Operating and Storage Temperature T , T -55 to 210 C j stg Dec 2014 2N7638-GA Section II: Static Electrical Characteristics Values Parameter Symbol Conditions Unit min. typ. max. A: On State I = 7 A, T = 25 C D j 170 Drain Source On Resistance R I = 7 A, T = 175 C m DS(ON) D j 320 I = 7 A, T = 210 C 440 D j I = 10 A, I /I = 40, T = 25 C 3.50 D D G j Gate Source Saturation Voltage V V GS,SAT ID = 10 A, ID/IG = 30, Tj = 175 C 3.27 V = 5 V, I = 10 A, T = 25 C 80 110 DS D j DC Current Gain h FE V = 5 V, I = 10 A, T = 210 C 50 80 DS D j B: Off State V = 600 V, V = 0 V, T = 25 C R GS j 10 100 V = 600 V, V = 0 V, T = 175 C Drain Leakage Current IDSS R GS j 40 400 A V = 600 V, V = 0 V, T = 210 C 100 600 R GS j C: Thermal Thermal resistance, junction - case R 1.0 C/W thJC Section III: Dynamic Electrical Characteristics Values Parameter Symbol Conditions Unit min. typ. max. A: Capacitance and Gate Charge Input Capacitance C V = 0 V, V = 500 V, f = 1 MHz 685 pF iss GS D Reverse Transfer/Output Capacitance C /C V = 500 V, f = 1 MHz 24 pF rss oss D V = 0 V, V = 500 V, f = 1 MHz Output Capacitance Stored Energy E GS D 3.1 J OSS Effective Output Capacitance, I = constant, V = 0 V, V = D GS DS C 50 pF oss,tr 0400 V time related Effective Output Capacitance, C V = 0 V, V = 0400 V 37 pF oss,er GS DS energy related Gate-Source Charge Q V = -53 V 11 nC GS GS Gate-Drain Charge Q V = 0 V, V = 0400 V 20 nC GD GS DS Gate Charge - Total Q 31 nC G B: Switching Turn On Delay Time t 10 ns d(on) Rise Time t 30 ns r T = 175 C, V = 400 V, j DS Turn Off Delay Time t 75 ns d(off) I = 7 A, Inductive Load D Fall Time t 40 ns f Refer to Section V for additional Turn-On Energy Per Pulse E 35 J on driving information. Turn-Off Energy Per Pulse E 65 J off Total Switching Energy E 100 J ts Turn On Delay Time t 10 ns d(on) Rise Time t 30 ns r T = 210 C, V = 400 V, j DS Turn Off Delay Time t 75 ns d(off) I = 7 A, Inductive Load D Fall Time t 60 ns f Refer to Section V for additional Turn-On Energy Per Pulse E 45 J on driving information. Turn-Off Energy Per Pulse E 80 J off Total Switching Energy E 125 J ts Dec 2014

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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