GB100XCP12-227 IGBT/SiC Diode Co-pack V = 1200 V CES I = 100 A CM V = 1.9 V CE(SAT) Features Package Optimal Punch Through (OPT) technology RoHS Compliant 2 SiC freewheeling diode Positive temperature coefficient for easy paralleling Extremely fast switching speeds 3 2 Temperature independent switching behavior of SiC rectifier Best RBSOA/SCSOA capability in the industry 3 High junction temperature 1 1 Industry standard packaging 3 SOT 227 Advantages Applications Industry s highest switching speeds Solar Inverters High temperature operation Aerospace Actuators Improved circuit efficiency Server Power Supplies Low switching losses Resonant Inverters > 100 kHz Inductive Heating Electronic Welders Maximum Ratings at T = 175 C, unless otherwise specified j Parameter Symbol Conditions Values Unit IGBT Collector-Emitter Voltage V 1200 V CES DC-Collector Current I T 130 C 100 A C C Limited by T Peak Collector Current I vjmax 200 A CM Gate Emitter Peak Voltage V 20 V GES V = 900 V, V 1200 V CC CEM IGBT Short Circuit SOA t 10 s psc V 15 V, Tv 125 C GE j Operating Temperature T -40 to +175 C vj Storage Temperature T -40 to +175 C stg I < 1 mA, 50/60 Hz, t = 1 s Isolation Voltage V 3000 V ISOL SOL Free-wheeling Silicon Carbide diode T 130 C DC-Forward Current I C 100 A F T = 25 C, t = 10 s C Non Repetitive Peak Forward Current I tbd A FM P t = 10 ms, half sine, T = 25 C C Surge Non Repetitive Forward Current I tbd A F,SM P Thermal Characteristics Thermal resistance, junction - case R IGBT 0.08 C/W thJC Thermal resistance, junction - case R SiC Diode 0.53 C/W thJC Values Mechanical Properties min. typ. max. Mounting Torque M 1.5 Nm d Terminal Connection Torque 1.3 1.5 Nm Weight 29 g Case Color Black Dimensions 38 x 25.4 x 12 mm Feb 2012 GB100XCP12-227 Electrical Characteristics at T = 175 C, unless otherwise specified j Values Parameter Symbol Conditions Unit min. typ. max. IGBT V = V , I = 4 mA, T = 25 C Gate Threshold Voltage V GE CE C j 5 6.2 7 V GE(th) V = 0 V, V = V , T = 25 C 0.10 1 mA I GE CE CES j CES,25 Collector-Emitter Leakage Current I V = 0 V, V = V , T = 175 C 3.15 mA CES,175 GE CE CES j Gate-Leakage Current I V = 0 V, V = 20 V, T = 175 C -400 400 nA GES CE GE j Collector-Emitter Threshold Voltage V T = 25C 1.1 V CE(TO) j R V = 15 V, T = 25 C 7.9 m CE,25 GE j Collector-Emitter Slope Resistance V = 15 V, T = 175 C R GE j 11.4 m CE,175 I = 100 A, V = 15 V, C GE Collector-Emitter Saturation Voltage V 1.9 (2.2) V CE(SAT) T = 25 C (175 C) j Input Capacitance C 8.55 nF ies V = 0 V, V = 25 V, GE CE Output Capacitance C 1.39 nF oes f = 1 MHz, T = 150 C j Reverse Transfer Capacitance C 0.25 nF res Internal Gate Resistance R 2 Gint V = 750 V, I = 100 A, CC C Gate Charge Q 900 (900) nC G V = -8..15 V, T = 25 C (125 C) GE j T = 25 C (175 C) Module Lead Resistance R c tbd m mod T =175 C, R =56, V =1200 V, j g CC Reverse Bias Safe Operating Area RBSOA 150 A V =15 V GE Short Circuit Current I T = 175 C, R = 56, V = 900 V, 470 A sc j g CC V = 15 V Short Circuit Duration t GE 10 s sc Rise Time t 254 ns r Fall Time t 153 ns f V = 800 V, I = 100 A, CC C Turn On Delay Time t 244 ns d(on) R = R = 10 , gon goff V = 15 V, V = -8 V, Turn Off Delay Time t GE(on) GE(off) 488 ns d(off) L = 0.8 H, T= 25 C S j Turn-On Energy Loss Per Pulse E 14.2 mJ on Turn-Off Energy Loss Per Pulse E 15.7 mJ off Rise Time t 211 ns r Fall Time t 172 ns f V = 800 V, I = 100 A, CC C Turn On Delay Time t R = R = 10 , 240 ns d(on) gon goff = 15 V, V = -8 V, Turn Off Delay Time t VGE(on) GE(off) 636 ns d(off) L = 0.8 H, T= 175 C S j Turn-On Energy Loss Per Pulse E 11.1 mJ on Turn-Off Energy Loss Per Pulse E 21.8 mJ off Free-wheeling Silicon Carbide Diode I = 100 A, V = 0 V, F GE Forward Voltage V 2.08 (3.5) V F T = 25 C (175 C ) j Threshold Voltage at Diode V T = 25 C 0.8 V D(TO) j Peak Reverse Recovery Current I 10 A rrm I = 100 A, V = 0 V, V = 800 V, F GE R -dI /dt = 625 A/s, T = 175 C Reverse Recovery Time t F j 100 ns rr Rise Time t 148 ns r V = 800 V, I = 100 A, CC C Fall Time t 336 ns f R = R = 10 , gon goff Turn-On Energy Loss Per Pulse E = 15 V, V = -8 V, 218 J on VGE(on) GE(off) L = 0.8 H, T= 25 C S j Turn-Off Energy Loss Per Pulse E 113 J off Reverse Recovery Charge Q 730 nC rr Rise Time t 178 ns r V = 800 V, I = 100 A, CC C Fall Time t 268 ns f R = R = 10 , gon goff Turn-On Energy Loss Per Pulse E 23 J on = 15 V, V = -8 V, VGE(on) GE(off) Turn-Off Energy Loss Per Pulse E 334 J off L = 0.8 H, T= 175 C S j Reverse Recovery Charge Q 480 nC rr Feb 2012