X-On Electronics has gained recognition as a prominent supplier of 2312 MOSFETs across the USA, India, Europe, Australia, and various other global locations. 2312 MOSFETs are a product manufactured by GOFORD. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

2312 GOFORD

Name: 2312
Brand: GOFORD
SKU: 2312_GOFORD
Availability: InStock
Rating: 5 (11 reviews)

Images are for reference only
See Product Specifications

Part No.	2312
Manufacturer:	GOFORD
Category:	MOSFETs
Description:	MOSFET N Trench 20V 6.8A 900mV @ 250uA 21 mÎ© @ 4.5A,4.5V SOT-23 (SOT-23-3) RoHS
Datasheet:	2312 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

5: USD 0.0495 ea
Line Total: USD 0.25

Availability - 14
Ship by Fri. 06 Dec to Wed. 11 Dec

MOQ: 5 Multiples: 5
Pack Size: 5

2312 More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

14

Ship by Fri. 06 Dec to Wed. 11 Dec

MOQ : 5
Multiples : 5

5 : USD 0.0495
50 : USD 0.0484
150 : USD 0.0475
500 : USD 0.0469

Specifications

Manufacturer
GOFORD GOFORD

Product Category
MOSFETs MOSFETs

Category
MOSFET MOSFET

Rohs
y y

Package
SOT - 23 (SOT - 23 - 3) SOT - 23 (SOT - 23 - 3)

Brand Category
GOFORD GOFORD

Fet Type
n trench n trench

Drain To Source Voltagevdss
20 V 20 V

Continuous Drain Current Id @ 25°C
6.8 A 6.8 A

Vgsth Max @ Id
900mv @ 250ua 900mv @ 250ua

Rds On Max @ Id Vgs
21 m @ 4.5a,4.5v 21 m @ 4.5a,4.5v

Power Dissipation-Max Ta
1.25 W 1.25 W

Drain Source Voltage Vdss
20 V 20 V

Continuous Drain Current Id
6.8 A 6.8 A

Drain Source On Resistance Rdson@Vgs Id
21 mOhms @4.5V , 4.5A 21 mOhms @4.5V , 4.5A

Power Dissipation Pd
1.25 W 1.25 W

Gate Threshold Voltage Vgsth@Id
900 mV @250uA 900 mV @250uA

Type
N Channel N Channel

Notes:- Show Stocked Products With Similar Attributes.

2312 Alternative Parts

We are delighted to provide the 2312 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2312 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The GOFORD 2312 is an RoHS compliant MOSFET N Trench transistor in the SOT-23-3 package with a maximum drain-source voltage of 20V and a continuous drain current of 6.8A. This transistor has a typical threshold voltage of 900mV and a typical gate-source on resistance of 21 mO when operated at 4.5V and 4.5A. The total gate charge for this device is 250uA.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Availability	Price	Buy Price	Quantity
14 Ship by Fri. 06 Dec to Wed. 11 Dec MOQ : 5 Multiples : 5	5 : USD 0.0495 50 : USD 0.0484 150 : USD 0.0475 500 : USD 0.0469

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