X-On Electronics has gained recognition as a prominent supplier of GC11N65T MOSFETs across the USA, India, Europe, Australia, and various other global locations. GC11N65T MOSFETs are a product manufactured by GOFORD. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

GC11N65T GOFORD

Name: GC11N65T
Brand: GOFORD
SKU: GC11N65T_GOFORD
Availability: InStock
Rating: 5 (11 reviews)

Images are for reference only
See Product Specifications

Part No.	GC11N65T
Manufacturer:	GOFORD
Category:	MOSFETs
Description:	MOSFET N Trench 650V 11A (Tc) 4V @ 250uA 360 mÎ© @ 5.5A,10V TO-220 RoHS
Datasheet:	GC11N65T Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 1.3295 ea
Line Total: USD 1.33

Availability - 36
Ship by Tue. 18 Mar to Fri. 21 Mar

MOQ: 1 Multiples: 1
Pack Size: 1

GC11N65T More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

36

Ship by Tue. 18 Mar to Fri. 21 Mar

MOQ : 1
Multiples : 1

1 : USD 1.3295
10 : USD 1.0946
50 : USD 0.6595
100 : USD 0.5699
500 : USD 0.5157
1000 : USD 0.4876

Specifications

Manufacturer

GOFORD GOFORD

Product Category

MOSFETs MOSFETs

Category

MOSFET MOSFET

Rohs

y y

Package

TO - 220 TO - 220

Brand Category

GOFORD GOFORD

Fet Type

n trench n trench

Drain To Source Voltagevdss

650 V 650 V

Continuous Drain Current Id @ 25°C

11 A (t C) 11 A (t C)

Vgsth Max @ Id

4v @ 250ua 4v @ 250ua

Rds On Max @ Id Vgs

360 m @ 5.5a,10v 360 m @ 5.5a,10v

Power Dissipation-Max Ta

78 W 78 W

Drain Source Voltage Vdss

650 V 650 V

Continuous Drain Current Id

11 A 11 A

Power Dissipation Pd

78 W 78 W

Drain Source On Resistance Rdson@Vgs Id

360 mOhms @10V , 5.5A 360 mOhms @10V , 5.5A

Gate Threshold Voltage Vgsth@Id

4 V @250uA 4 V @250uA

Type

N Channel N Channel

Notes:- Show Stocked Products With Similar Attributes.

GC11N65T Alternative Parts

We are delighted to provide the GC11N65T from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the GC11N65T and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The GC11N65T MOSFET is a N-Channel trench-gate field effect transistor manufactured by GOFORD. It has a maximum voltage rating of 650V and a maximum current rating of 11A. It features a threshold voltage of 4V @ 250uA, a drain-source on-resistance of 360 mO @ 5.5A, and a drain-source breakdown voltage of 10V. It has a TO-220 package and is RoHS compliant.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Availability	Price	Buy Price	Quantity
36 Ship by Tue. 18 Mar to Fri. 21 Mar MOQ : 1 Multiples : 1	1 : USD 1.3295 10 : USD 1.0946 50 : USD 0.6595 100 : USD 0.5699 500 : USD 0.5157 1000 : USD 0.4876

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