The 5N60F with TO-220F MOSFETs ROHS manufactured by GOFORD is a low voltage, high speed, insulated gate bi-polar transistor (IGBT) with TO-220F full pack package. This device features fast switching speeds, low on-state resistance (RDS(on)), and exceptional avalanche characteristics. This transistor can be operated up to 1.7A and is suitable for high frequency switching applications up to 500V. Its RoHS compliant package makes it one of the most environmentally friendly power transistors available. It can be used on its own or combined with a parallel diode to form a robust, high temperature, high efficiency power switching circuit. The 5N60F is perfect for controlling power converters, motor control systems, and other industrial equipment.