X-On Electronics has gained recognition as a prominent supplier of G100N04 MOSFETs across the USA, India, Europe, Australia, and various other global locations. G100N04 MOSFETs are a product manufactured by GOFORD. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

G100N04 GOFORD

G100N04 electronic component of GOFORD
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Part No.G100N04
Manufacturer: GOFORD
Category: MOSFETs
Description: MOSFET N Trench 40V 100A 1.9V @ 250uA 6.5 mΩ @ 20A,10V TO-220 (TO-220-3) RoHS
Datasheet:
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.0128 ea
Line Total: USD 1.01 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
   
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the G100N04 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the G100N04 and other electronic components in the MOSFETs category and beyond.

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The G100N04 is a MOSFET N Trench power transistor. It has a maximum drain to source voltage of 40V and a drain current capability of 100A. The Gate threshold voltage is 1.9V at 250uA of Gate current. Its drain to source resistance is 6.5 mO at 20A and 10V. It is packaged in a compact TO-220-3 with a RoHS compliant construction. This device is manufactured by GOFORD.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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