X-On Electronics has gained recognition as a prominent supplier of G10N10A MOSFETs across the USA, India, Europe, Australia, and various other global locations. G10N10A MOSFETs are a product manufactured by GOFORD. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

G10N10A GOFORD

G10N10A electronic component of GOFORD
G10N10A GOFORD
G10N10A MOSFETs
G10N10A  Semiconductors

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See Product Specifications
Part No. G10N10A
Manufacturer: GOFORD
Category: MOSFETs
Description: MOSFET SOP-8_150mil RoHS
Datasheet:
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
30: USD 0.4686 ea
Line Total: USD 14.06 
Availability - 0
MOQ: 30  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Mon. 12 May to Thu. 15 May
MOQ : 30
Multiples : 1
30 : USD 0.4686
100 : USD 0.4384
500 : USD 0.4224
1000 : USD 0.4163
5000 : USD 0.3996

   
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the G10N10A from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the G10N10A and other electronic components in the MOSFETs category and beyond.

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The G10N10A with MOSFET SOP-8_150mil RoHS manufactured by GOFORD is a Power MOSFET designed for use in a variety of switching and amplifying applications. It is a MOSFET-based device, constructed with eight 150 mil legs made of multiple layers of semiconductor and dielectric materials. The device is RoHS compliant, and can handle a collector-emitter voltage of up to 100V with a maximum drain current of 10A and a drain-source on-resistance of 1.2 Ohms. It has a maximum power dissipation of 633mW and is capable of fast switching between on and off states. Furthermore, the device has a wide range of features including temperature independent switching, low input capacitance, and simplified packaging.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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