X-On Electronics has gained recognition as a prominent supplier of G13N04 MOSFETs across the USA, India, Europe, Australia, and various other global locations. G13N04 MOSFETs are a product manufactured by GOFORD. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

G13N04 GOFORD

G13N04 electronic component of GOFORD
G13N04 GOFORD
G13N04 MOSFETs
G13N04  Semiconductors

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See Product Specifications
Part No. G13N04
Manufacturer: GOFORD
Category: MOSFETs
Description: MOSFET N Trench 40V 13A 2.3V @ 250uA 12 mΩ @ 6.5A,10V SOP-8_150mil RoHS
Datasheet:
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.2617 ea
Line Total: USD 0.26 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
   
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation Max
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the G13N04 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the G13N04 and other electronic components in the MOSFETs category and beyond.

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The G13N04 is an N-channel MOSFET manufactured by GOFORD. It is designed for use in circuits where high switching speeds and high-performance power handling requirements are needed. It has a rated voltage of 40V, a rated current of 13A, a gate threshold voltage of 2.3V at 250uA, an on-state resistance of 12 m¿ at 6.5A, and a maximum drain-source breakdown voltage of 10V. It is packaged in an SOP-8 with a 150mil body size and is RoHS compliant.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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