X-On Electronics has gained recognition as a prominent supplier of G33N03D3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. G33N03D3 MOSFETs are a product manufactured by GOFORD. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

G33N03D3 GOFORD

Name: G33N03D3
Brand: GOFORD
SKU: G33N03D3_GOFORD
Availability: InStock
Rating: 5 (11 reviews)

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See Product Specifications

Part No.	G33N03D3
Manufacturer:	GOFORD
Category:	MOSFETs
Description:	MOSFET 2 N Channel(Double) 30V 33A(Tc) 1.1V @ 250uA 12mΩ @ 18A,10V DFN3.3*3.3-8L RoHS
Datasheet:	G33N03D3 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

5: USD 0.2094 ea
Line Total: USD 1.05

Availability - 52
Ship by Fri. 03 Jan to Wed. 08 Jan

MOQ: 5 Multiples: 5
Pack Size: 5

G33N03D3 More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

52

Ship by Fri. 03 Jan to Wed. 08 Jan

MOQ : 5
Multiples : 5

5 : USD 0.2094
50 : USD 0.1732
150 : USD 0.1577
500 : USD 0.1383
2500 : USD 0.1052
5000 : USD 0.0999

Specifications

Manufacturer
GOFORD GOFORD

Product Category
MOSFETs MOSFETs

Category
MOSFET MOSFET

Rohs
y y

Package
Dfn3.3*3.3 - 8L Dfn3.3*3.3 - 8L

Brand Category
Goford Goford

Fet Type
dualn - channel dualn - channel

Drain To Source Voltagevdss
30 V 30 V

Continuous Drain Current Id @ 25°C
33 A (t C) 33 A (t C)

Vgsth Max @ Id
1.1 V @ 250ua 1.1 V @ 250ua

Rds On Max @ Id Vgs
12m? @ 18a,10v 12m? @ 18a,10v

Power Dissipation-Max Ta 25°C
20 W 20 W

Drain Source Voltage Vdss
30 V 30 V

Continuous Drain Current Id
33 A 33 A

Power Dissipation Pd
20 W 20 W

Drain Source On Resistance Rdson@Vgs Id
12 mOhms @10V , 18A 12 mOhms @10V , 18A

Gate Threshold Voltage Vgsth@Id
1.1 V @250uA 1.1 V @250uA

Type
2 N - Channel 2 N - Channel

Notes:- Show Stocked Products With Similar Attributes.

G33N03D3 Alternative Parts

We are delighted to provide the G33N03D3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the G33N03D3 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The G33N03D3 is a double n-channel 30V 33A(TC) metal oxide semiconductor field effect transistor (MOSFET) manufactured by GOFORD. It has a maximum gate-source threshold voltage of 1.1V @ 250uA, and a drain-source on-state resistance of 12mO @ 18A, 10V. Additionally, it features a DFN3.3*3.3-8L package, and is compliant with RoHS standards.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Availability	Price	Buy Price	Quantity
52 Ship by Fri. 03 Jan to Wed. 08 Jan MOQ : 5 Multiples : 5	5 : USD 0.2094 50 : USD 0.1732 150 : USD 0.1577 500 : USD 0.1383 2500 : USD 0.1052 5000 : USD 0.0999

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