X-On Electronics has gained recognition as a prominent supplier of GC11N65F MOSFETs across the USA, India, Europe, Australia, and various other global locations. GC11N65F MOSFETs are a product manufactured by GOFORD. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

GC11N65F GOFORD

Name: GC11N65F
Brand: GOFORD
SKU: GC11N65F_GOFORD
Availability: InStock
Rating: 5 (11 reviews)

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See Product Specifications

Part No.	GC11N65F
Manufacturer:	GOFORD
Category:	MOSFETs
Description:	MOSFET N Trench 650V 11A (Tc) 4V @ 250uA 360 mÎ© @ 5.5A,10V TO-220F RoHS
Datasheet:	GC11N65F Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 0.9317 ea
Line Total: USD 0.93

Availability - 54
Ship by Wed. 22 Jan to Mon. 27 Jan

MOQ: 1 Multiples: 1
Pack Size: 1

GC11N65F More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

54

Ship by Wed. 22 Jan to Mon. 27 Jan

MOQ : 1
Multiples : 1

1 : USD 0.9317
10 : USD 0.7735
50 : USD 0.6592
100 : USD 0.581
500 : USD 0.5334
1000 : USD 0.5087

Specifications

Manufacturer

GOFORD GOFORD

Product Category

MOSFETs MOSFETs

Category

MOSFET MOSFET

Rohs

y y

Package

TO - 220F TO - 220F

Brand Category

GOFORD GOFORD

Fet Type

n trench n trench

Drain To Source Voltagevdss

650 V 650 V

Continuous Drain Current Id @ 25°C

11 A (t C) 11 A (t C)

Vgsth Max @ Id

4v @ 250ua 4v @ 250ua

Rds On Max @ Id Vgs

360 m @ 5.5a,10v 360 m @ 5.5a,10v

Power Dissipation-Max Ta

31.3 W 31.3 W

Drain Source Voltage Vdss

650 V 650 V

Continuous Drain Current Id

11 A 11 A

Power Dissipation Pd

31.3 W 31.3 W

Drain Source On Resistance Rdson@Vgs Id

360 mOhms @10V , 5.5A 360 mOhms @10V , 5.5A

Gate Threshold Voltage Vgsth@Id

4 V @250uA 4 V @250uA

Type

N Channel N Channel

Notes:- Show Stocked Products With Similar Attributes.

GC11N65F Alternative Parts

We are delighted to provide the GC11N65F from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the GC11N65F and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The GC11N65F is a MOSFET Transistor from the GOFORD series with Trench N type. It has a voltage rating of 650 V and current rating of 11 A. The transistor has a Thermal Resistance (Tc) of 4V @ 250 uA, a Static Drain-Source On-Resistance (RDS(on)) of 360 mO @ 5.5A, 10V and is available in a TO-220F form factor with RoHS compliance.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Availability	Price	Buy Price	Quantity
54 Ship by Wed. 22 Jan to Mon. 27 Jan MOQ : 1 Multiples : 1	1 : USD 0.9317 10 : USD 0.7735 50 : USD 0.6592 100 : USD 0.581 500 : USD 0.5334 1000 : USD 0.5087

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