The GOFORD GT080N10T is a N Channel MOSFET with a maximum voltage of 100V, a maximum current of 75A, a low-end on resistance of 6mO at 10V, a power dissipation of 100W at 50A, a maximum gate threshold voltage of 2.2V at 250uA, a maximum capacitance of 22pF at 50V, a maximum drain-source capacitance of 3.65nF at 50V, a maximum gate charge of 70nC at 10V, and operational temperature range of -55? to 150? at (Tj). This device is suitable for use in applications such as high speed switching and power conversion applications. It is manufactured with RoHS compliant materials and is offered in the TO-220 package.