X-On Electronics has gained recognition as a prominent supplier of XM2N200 MOSFETs across the USA, India, Europe, Australia, and various other global locations. XM2N200 MOSFETs are a product manufactured by GOFORD. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

XM2N200 GOFORD

Name: XM2N200
Brand: GOFORD
SKU: XM2N200_GOFORD
Availability: OutOfStock
Rating: 5 (11 reviews)

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See Product Specifications

Part No.	XM2N200
Manufacturer:	GOFORD
Category:	MOSFETs
Description:	MOSFET N Trench 190V 2A 3V @ 250uA 560 mÎ© @ 1A,4.5V TO-92 RoHS
Datasheet:	XM2N200 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

5: USD 0.0723 ea
Line Total: USD 0.36

Availability - 0

MOQ: 5 Multiples: 5
Pack Size: 5

XM2N200 More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Wed. 22 Jan to Mon. 27 Jan MOQ : 5 Multiples : 5	5 : USD 0.0723 50 : USD 0.0705 150 : USD 0.0692 500 : USD 0.068

Specifications

Manufacturer GOFORD GOFORD
Product Category MOSFETs MOSFETs
Category MOSFET MOSFET
Rohs y y
Package TO - 92 TO - 92
Brand Category GOFORD GOFORD
Fet Type n trench n trench
Drain To Source Voltagevdss 190 V 190 V
Continuous Drain Current Id @ 25°C 2 A 2 A
Vgsth Max @ Id 3v @ 250ua 3v @ 250ua
Rds On Max @ Id Vgs 560 m @ 1a,4.5v 560 m @ 1a,4.5v
Power Dissipation-Max Ta 3 W 3 W
Drain Source Voltage Vdss 190 V 190 V
Continuous Drain Current Id 2 A 2 A
Power Dissipation Pd 3 W 3 W
Drain Source On Resistance Rdson@Vgs Id 560 mOhms @4.5V , 1A 560 mOhms @4.5V , 1A
Gate Threshold Voltage Vgsth@Id 3 V @250uA 3 V @250uA
Type N Channel N Channel

We are delighted to provide the XM2N200 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the XM2N200 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The XM2N200 is a MOSFET transistor manufactured by GOFORD with a N Trench structure. It has a breakdown voltage of 190V and a maximum drain current of 2A when operated at 3V. It has a on-resistance of 560 mOhm at 1A and a gate-source threshold voltage of 4.5V. Finally, the transistor comes in a TO-92 package with RoHS compliant silicone coating.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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