X-On Electronics has gained recognition as a prominent supplier of HF12N60 MOSFETs across the USA, India, Europe, Australia, and various other global locations. HF12N60 MOSFETs are a product manufactured by Haolin. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

HF12N60 Haolin

Name: HF12N60
Brand: Haolin
SKU: HF12N60_Haolin
Availability: OutOfStock
Rating: 5 (11 reviews)

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See Product Specifications

Part No.	HF12N60
Manufacturer:	Haolin
Category:	MOSFETs
Description:	MOSFET N Trench 600V 12A (Tc) 4V @ 250uA 650 mÎ© @ 6A,10V TO-220F (TO-220IS) RoHS
Datasheet:	HF12N60 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 0.5709 ea
Line Total: USD 0.57

Availability - 0

MOQ: 1 Multiples: 1
Pack Size: 1

HF12N60 More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Wed. 19 Mar to Mon. 24 Mar MOQ : 1 Multiples : 1	1 : USD 0.5709 10 : USD 0.5572 30 : USD 0.5485 100 : USD 0.5397

Specifications

Manufacturer Haolin Haolin
Product Category MOSFETs MOSFETs
Category MOSFET MOSFET
Rohs y y
Package TO - 220F (TO - 220IS) TO - 220F (TO - 220IS)
Brand Category Haolin Haolin
Fet Type n trench n trench
Drain To Source Voltagevdss 600 V 600 V
Continuous Drain Current Id @ 25°C 12 A (t C) 12 A (t C)
Vgsth Max @ Id 4v @ 250ua 4v @ 250ua
Rds On Max @ Id Vgs 650 m @ 6a,10v 650 m @ 6a,10v
Power Dissipation-Max Ta 51 W 51 W
Drain Source Voltage Vdss 600 V 600 V
Continuous Drain Current Id 12 A 12 A
Power Dissipation Pd 51 W 51 W
Drain Source On Resistance Rdson@Vgs Id 650 mOhms @10V , 6A 650 mOhms @10V , 6A
Gate Threshold Voltage Vgsth@Id 4 V @250uA 4 V @250uA
Type N Channel N Channel

We are delighted to provide the HF12N60 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the HF12N60 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The HF12N60 with MOSFET N Trench 600V 12A (Tc) 4V @ 250uA 650mO @ 6A, 10V TO-220F (TO-220IS) RoHS is a power semiconductor device manufactured by Haolin. It is a single N-channel MOSFET transistor featuring an advanced high-voltage trench process design. It has a breakdown voltage rating of 600V, capable of handling 12A at 4V @ 250uA of power dissipation. It also has a low on-state resistance of 650mO at 6A, 10V. The part is available in a standard TO-220F (TO-220IS) package and has the RoHS (Restriction of Hazardous Substances) directive compliant.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Haolin Elec may also be referenced as

HL(Haolin Elec)

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