X-On Electronics has gained recognition as a prominent supplier of MMBT5551 G1 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. MMBT5551 G1 Bipolar Transistors - BJT are a product manufactured by Hong Kong Chuangji. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

MMBT5551 G1 Hong Kong Chuangji

Name: MMBT5551 G1
Brand: Hong Kong Chuangji
SKU: MMBT5551G1_Hong Kong Chuangji
Availability: InStock
Rating: 5 (11 reviews)

MMBT5551 G1 electronic component of Hong Kong Chuangji

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See Product Specifications

Part No.	MMBT5551 G1
Manufacturer:	Hong Kong Chuangji
Category:	Bipolar Transistors - BJT
Description:	160V 300mW 100@10mA,5V 600mA NPN SOT-23 Bipolar Transistors - BJT ROHS
Datasheet:	MMBT5551 G1 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

50: USD 0.0134 ea
Line Total: USD 0.67

Availability - 55605
Ship by Fri. 03 Jan to Wed. 08 Jan

MOQ: 50 Multiples: 50
Pack Size: 50

MMBT5551 G1 More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

55605

Ship by Fri. 03 Jan to Wed. 08 Jan

MOQ : 50
Multiples : 50

50 : USD 0.0134
500 : USD 0.0108
3000 : USD 0.0087
6000 : USD 0.0078
24000 : USD 0.007
51000 : USD 0.0066

Specifications

Manufacturer
Hong Kong Chuangji Hong Kong Chuangji

Product Category
Bipolar Transistors - BJT Bipolar Transistors - BJT

Package
SOT - 23 SOT - 23

Rohs
y y

Collector Cut-Off Current Icbo
50 nA 50 nA

Collector-Emitter Breakdown Voltage Vceo
160 V 160 V

Power Dissipation Pd
300 mW 300 mW

Dc Current Gain Hfe@Ic Vce
100@10 mA , 5V 100@10 mA , 5V

Collector Current Ic
600 mA 600 mA

Transition Frequency Ft
100MHz 100MHz

Collector-Emitter Saturation Voltage Vcesat@Ic Ib
200 mV @50 mA , 5 mA 200 mV @50 mA , 5 mA

Transistor Type
NPN NPN

Operating Temperature
+ 150 C @ (Tj) + 150 C @ (Tj)

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We are delighted to provide the MMBT5551 G1 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MMBT5551 G1 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

The MMBT5551 G1 with 160V 300mW 100@10mA,5V 600mA NPN SOT-23 Bipolar Transistor - BJT ROHS is an electrical component manufactured by the Hong Kong company Chuangji. This component is a NPN type Bipolar Junction Transistor (BJT) with a SOT-23 surface mount package and meets RoHS (Restriction of Hazardous Substances) requirements. It is capable of withstanding 160V, is capable of handling a maximum power dissipation of 300mW, and has a power gain of 100 @ 10mA. Furthermore, it has a collector current capacity of up to 5V 600mA.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Availability	Price	Buy Price	Quantity
55605 Ship by Fri. 03 Jan to Wed. 08 Jan MOQ : 50 Multiples : 50	50 : USD 0.0134 500 : USD 0.0108 3000 : USD 0.0087 6000 : USD 0.0078 24000 : USD 0.007 51000 : USD 0.0066

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