Product Information

HT65NF06ATZ

HT65NF06ATZ electronic component of HTCSEMI

Datasheet
60V 65A 0.015Ω@10V,25A 120W 4V@250uA 70pF@25V N Channel 1050pF@25V 32nC@10V +150℃@(Tj) TO-220AB/3 MOSFETs ROHS
Manufacturer: HTCSEMI
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.6144 ea
Line Total: USD 0.61

199 - Global Stock
Ships to you between
Mon. 03 Jun to Thu. 06 Jun
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
5 - WHS 1


Ships to you between
Mon. 03 Jun to Thu. 06 Jun

MOQ : 1
Multiples : 1

Stock Image

HT65NF06ATZ
HTCSEMI

1 : USD 0.576
10 : USD 0.4552
50 : USD 0.4029
100 : USD 0.3385
500 : USD 0.3082
1000 : USD 0.2901

Read More Specifications

     
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Additional Infomation About Product

The HT65NF06ATZ is an N channel MOSFET manufactured by HTCSEMI. It has a maximum voltage rating of 60V and a drain current limit of 65A. The drain-source on-resistance is 0.015O at 10V and 25A. It is rated for a maximum power dissipation of 120W, a gate-source threshold of 4V at 250uA, and a total gate capacitance of 70pF at 25V. The gate-drain capacitance is 1050pF at 25V, and the gate-source reverse transfer capacitance is 32nC at 10V. Its maximum operation junction temperature is +150?. The package type is TO-220AB/3 and it is ROHS compliant.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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