X-On Electronics has gained recognition as a prominent supplier of HFGM100D12V1 IGBT Modules across the USA, India, Europe, Australia, and various other global locations. HFGM100D12V1 IGBT Modules are a product manufactured by HUAJING. We provide cost-effective solutions for IGBT Modules, ensuring timely deliveries around the world.

HFGM100D12V1 HUAJING

HFGM100D12V1 electronic component of HUAJING
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See Product Specifications
Part No.HFGM100D12V1
Manufacturer: HUAJING
Category: IGBT Modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Datasheet:
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 47.824 ea
Line Total: USD 47.82 
Availability - 9
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
9
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ : 1
Multiples : 1
1 : USD 47.824

   
Manufacturer
Product Category
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Max. Off-State Voltage
Pulsed Collector Current
Collector Current
Mechanical Mounting
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We are delighted to provide the HFGM100D12V1 from our IGBT Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the HFGM100D12V1 and other electronic components in the IGBT Modules category and beyond.

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The HFGM100D12V1 is an IGBT Module manufactured by Huajing. It is an IGBT Half-bridge with a rated collector current of 100A. It consists of two transistors, one N-channel and one P-channel, which forms a single component, sharing a common isolation layer. This allows for higher switching speeds and lower losses compared to conventional bipolar transistors, making it suitable for high power applications. It can operate at temperatures up to 150°C and is compatible with AC and DC voltage inputs. It is highly efficient, reliable, and has a low EMI level.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Wuxi China Resources Huajing Microelectronics
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