X-On Electronics has gained recognition as a prominent supplier of HFGM200D12V3 IGBT Modules across the USA, India, Europe, Australia, and various other global locations. HFGM200D12V3 IGBT Modules are a product manufactured by HUAJING. We provide cost-effective solutions for IGBT Modules, ensuring timely deliveries around the world.

HFGM200D12V3 HUAJING

HFGM200D12V3 electronic component of HUAJING
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See Product Specifications
Part No.HFGM200D12V3
Manufacturer: HUAJING
Category: IGBT Modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Datasheet:
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 79.092 ea
Line Total: USD 79.09 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 79.092

   
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We are delighted to provide the HFGM200D12V3 from our IGBT Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the HFGM200D12V3 and other electronic components in the IGBT Modules category and beyond.

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The HUAJING HFGM200D12V3 module is an Industrial Grade Insulated Gate Bipolar Transistor (IGBT) Half Bridge. This module is designed to handle high current load applications with maximum current capacity of 200 Amps. It is capable of switching power supply voltage up to 12V DC, supporting dc-dc converters, power inverters, UPS systems and motor drives. It features high efficiency and superior electrical performance and is designed with a strong heat-conductive metal base to ensure a reliable and robust operation. The IGBT technology ensures steady operation in wide temperature range and improved reliability due to its fast switching speed and low conduction loss.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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