X-On Electronics has gained recognition as a prominent supplier of HSBE2730 MOSFETs across the USA, India, Europe, Australia, and various other global locations. HSBE2730 MOSFETs are a product manufactured by HUASHUO. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

HSBE2730 HUASHUO

Name: HSBE2730
Brand: HUASHUO
SKU: HSBE2730_HUASHUO
Availability: InStock
Rating: 5 (11 reviews)

HSBE2730 electronic component of HUASHUO

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See Product Specifications

Part No.	HSBE2730
Manufacturer:	HUASHUO
Category:	MOSFETs
Description:	MOSFET 2 N Channel(Double) 20V 7A 1.2V @ 250uA 17mO @ 3A,4.5V PRPAK3x3NEP RoHS
Datasheet:	HSBE2730 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 0.1451 ea
Line Total: USD 0.15

Availability - 38
Ship by Fri. 10 Jan to Wed. 15 Jan

MOQ: 1 Multiples: 1
Pack Size: 1

HSBE2730 More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

38

Ship by Fri. 10 Jan to Wed. 15 Jan

MOQ : 1
Multiples : 1

1 : USD 0.1451
10 : USD 0.142
30 : USD 0.1398
100 : USD 0.1377

Specifications

Manufacturer

HUASHUO HUASHUO

Product Category

MOSFETs MOSFETs

Category

MOSFET MOSFET

Rohs

y y

Package

Prpak3x3nep Prpak3x3nep

Brand Category

Huashuo Huashuo

Fet Type

2 N Channel(Double) 2 N Channel(Double)

Drain To Source Voltagevdss

20 V 20 V

Continuous Drain Current Id @ 25°C

7 A 7 A

Vgsth Max @ Id

1.2V @ 250uA 1.2V @ 250uA

Rds On Max @ Id Vgs

17mO @ 3A,4.5V 17mO @ 3A,4.5V

Power Dissipation-Max Ta 25°C

1.47 W 1.47 W

Drain Source Voltage Vdss

20 V 20 V

Continuous Drain Current Id

7 A 7 A

Drain Source On Resistance Rdson@Vgs Id

17 mOhms @4.5V , 3A 17 mOhms @4.5V , 3A

Power Dissipation Pd

1.47 W 1.47 W

Gate Threshold Voltage Vgsth@Id

1.2 V @250uA 1.2 V @250uA

Type

2 N - Channel 2 N - Channel

Notes:- Show Stocked Products With Similar Attributes.

HSBE2730 Alternative Parts

We are delighted to provide the HSBE2730 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the HSBE2730 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The HSBE2730 Electronic part is a double MOSFET 2 N channel, rated for 20V, 7A, 1.2V @ 250uA, 17mO @ 3A and 4.5V PRPAK3x3NEP. It is manufactured by HUASHUO and is RoHS compliant. This component is designed to offer a high switching speed, low on-resistance, and low gate drive power requirements. It is an ideal choice for power saving solutions as it has a low channel temperature rise under higher load conditions. This part is also suitable for load and line switch applications, high frequency switching, and motor control due to its excellent electrical characteristics.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

HUASHUO may also be referenced as

Huashuo Semiconductor

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Availability	Price	Buy Price	Quantity
38 Ship by Fri. 10 Jan to Wed. 15 Jan MOQ : 1 Multiples : 1	1 : USD 0.1451 10 : USD 0.142 30 : USD 0.1398 100 : USD 0.1377

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