ElectronicsThe HSCB1216 with MOSFET P Channel 12V 16A 1.2V @ 250uA 15mO @ 8A,4.5V DFN2x2-6L RoHS is a power semiconductor manufactured by HUASHUO Electronics. It is a P-channel MOSFET with a voltage rating of 12V, a current rating of 16A, a drive voltage of 1.2V, a gate leakage current of 250uA, a on-state resistance of 15mO, a forward transfer admittance of 8A, and a drive voltage of 4.5V. It is housed in a low-power, space-saving DFN2x2-6L package and is compliant with RoHS standards.