X-On Electronics has gained recognition as a prominent supplier of HSM4606 MOSFETs across the USA, India, Europe, Australia, and various other global locations. HSM4606 MOSFETs are a product manufactured by HUASHUO. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

HSM4606 HUASHUO

Name: HSM4606
Brand: HUASHUO
SKU: HSM4606_HUASHUO
Availability: InStock
Rating: 5 (11 reviews)

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See Product Specifications

Part No.	HSM4606
Manufacturer:	HUASHUO
Category:	MOSFETs
Description:	MOSFET N & P Channel 30V,-30V 7A,-6A 3V @ 250uA 28mO @ 6A,10V;32mO @ 6A,10V SOP-8 RoHS
Datasheet:	HSM4606 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

5: USD 0.1762 ea
Line Total: USD 0.88

Availability - 119
Ship by Fri. 10 Jan to Wed. 15 Jan

MOQ: 5 Multiples: 5
Pack Size: 5

HSM4606 More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

119

Ship by Fri. 10 Jan to Wed. 15 Jan

MOQ : 5
Multiples : 5

5 : USD 0.1762
50 : USD 0.1393
150 : USD 0.1235
500 : USD 0.1037
2500 : USD 0.0949
4000 : USD 0.0897

Specifications

Manufacturer

HUASHUO HUASHUO

Product Category

MOSFETs MOSFETs

Category

MOSFET MOSFET

Rohs

y y

Package

SOP - 8 SOP - 8

Brand Category

Huashuo Huashuo

Fet Type

N amp; P Channel N amp; P Channel

Drain To Source Voltagevdss

30 V , - 30 V 30 V , - 30 V

Continuous Drain Current Id @ 25°C

7 A , - 6 A 7 A , - 6 A

Vgsth Max @ Id

3V @ 250uA 3V @ 250uA

Rds On Max @ Id Vgs

28mO @ 6A,10V;32mO @ 6A,10V 28mO @ 6A,10V;32mO @ 6A,10V

Power Dissipation-Max Ta 25°C

1.5 W 1.5 W

Drain Source Voltage Vdss

- -

Continuous Drain Current Id

- -

Drain Source On Resistance Rdson@Vgs Id

- -

Power Dissipation Pd

- -

Gate Threshold Voltage Vgsth@Id

- -

Reverse Transfer Capacitance Crss@Vds

- -

Type

1PCSN - Channelamp;1PCSP - Channel 1PCSN - Channelamp;1PCSP - Channel

Input Capacitance Ciss@Vds

- -

Total Gate Charge Qg@Vgs

- -

Notes:- Show Stocked Products With Similar Attributes.

HSM4606 Alternative Parts

We are delighted to provide the HSM4606 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the HSM4606 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The HSM4606 from Huashuo is an N and Pchannel dual-gate MOSFET in a SOP-8 RoHS package. It has a 30V/-30V drain-source voltage range with a 7A/-6A drain current rating. It has a 3V gate voltage rating with a 250uA gate leakage current, a 28mO drain-source resistance at 6A drain current and 10V drain source voltage, and a 32mO drain-source resistance at 6A drain current and 10V drain source voltage.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

HUASHUO may also be referenced as

Huashuo Semiconductor

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Availability	Price	Buy Price	Quantity
119 Ship by Fri. 10 Jan to Wed. 15 Jan MOQ : 5 Multiples : 5	5 : USD 0.1762 50 : USD 0.1393 150 : USD 0.1235 500 : USD 0.1037 2500 : USD 0.0949 4000 : USD 0.0897

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