X-On Electronics has gained recognition as a prominent supplier of HSP3018B MOSFETs across the USA, India, Europe, Australia, and various other global locations. HSP3018B MOSFETs are a product manufactured by HUASHUO. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

HSP3018B HUASHUO

Name: HSP3018B
Brand: HUASHUO
SKU: HSP3018B_HUASHUO
Availability: InStock
Rating: 5 (11 reviews)

HSP3018B electronic component of HUASHUO

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See Product Specifications

Part No.	HSP3018B
Manufacturer:	HUASHUO
Category:	MOSFETs
Description:	MOSFET N Channel 30V 205A 2.5V @ 250uA 2.4mΩ @ 30A,10V TO-220 RoHS
Datasheet:	HSP3018B Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 0.6087 ea
Line Total: USD 0.61

Availability - 8
Ship by Fri. 10 Jan to Wed. 15 Jan

MOQ: 1 Multiples: 1
Pack Size: 1

HSP3018B More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

8

Ship by Fri. 10 Jan to Wed. 15 Jan

MOQ : 1
Multiples : 1

1 : USD 0.6087
10 : USD 0.4962
50 : USD 0.4142
100 : USD 0.355
500 : USD 0.3283
1000 : USD 0.3131

Specifications

Manufacturer

HUASHUO HUASHUO

Product Category

MOSFETs MOSFETs

Category

MOSFET MOSFET

Rohs

y y

Package

TO - 220 TO - 220

Brand Category

Huashuo Huashuo

Fet Type

n - channel n - channel

Drain To Source Voltagevdss

30 V 30 V

Continuous Drain Current Id @ 25°C

205 A 205 A

Vgsth Max @ Id

2.5 V @ 250ua 2.5 V @ 250ua

Rds On Max @ Id Vgs

2.4m? @ 30a,10v 2.4m? @ 30a,10v

Power Dissipation-Max Ta 25°C

187 W 187 W

Drain Source Voltage Vdss

30 V 30 V

Continuous Drain Current Id

205 A 205 A

Drain Source On Resistance Rdson@Vgs Id

2.4 mOhms @10V , 30A 2.4 mOhms @10V , 30A

Power Dissipation Pd

187 W 187 W

Gate Threshold Voltage Vgsth@Id

2.5 V @250uA 2.5 V @250uA

Type

N Channel N Channel

Notes:- Show Stocked Products With Similar Attributes.

HSP3018B Alternative Parts

We are delighted to provide the HSP3018B from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the HSP3018B and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The HSP3018B MOSFET N-Channel Power Transistor manufactured by HUASHUO is a high-voltage power MOSFET designed for switching applications in consumer electronics and other applications requiring high and efficient switching operations. Its Drain-Source Breakdown Voltage is 30 Volts, which allows it to handle higher voltages efficiently. This transistor has a continuous Drain Current of 205 Amps atT25°C. It has a maximum Drain-Source On-Resistance of 2.4mO at a drain current of 30 Amps and Gate-Source Threshold Voltage of 2.5 Volts at 250uA. This transistor is housed in a RoHS compliant TO-220 package, suitable for low power designs.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Availability	Price	Buy Price	Quantity
8 Ship by Fri. 10 Jan to Wed. 15 Jan MOQ : 1 Multiples : 1	1 : USD 0.6087 10 : USD 0.4962 50 : USD 0.4142 100 : USD 0.355 500 : USD 0.3283 1000 : USD 0.3131

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