The HSS4P06 with SOT-23 MOSFETs, ROHS manufactured by HUASHUO is a low-noise, low-power, ultra-low-on-resistance N-channel MOSFET designed for a wide range of applications including data communication, cellular base stations, rectifier diodes and other high current switching applications. It features a die designed specifically for high current and low on-resistance, low noise operation, and a diode-protected N-channel MOSFET. The device package is an industry standard SOT-23 package, which is ideal for high density, compact applications. The device has been tested and certified by an approved third-party laboratory and carries the RoHS mark for low environmental impact, making it compliant with lead-free requirements.